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2SJ127

Description
10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size155KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SJ127 Overview

10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

2SJ127 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage120 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SJ127 Related Products

2SJ127 2SJ237 2SK1776 2SK1778 2SK2830 2SJ236 2SK1777
Description 10A, 120V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 15A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET 10A, 60V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET 10A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET 9A, 500V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET 10A, 60V, 0.25ohm, P-CHANNEL, Si, POWER, MOSFET 15A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET
Reach Compliance Code unknow unknow compli compli compli unknow compli
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 120 V 60 V 60 V 100 V 500 V 60 V 60 V
Maximum drain current (ID) 10 A 15 A 10 A 10 A 9 A 10 A 15 A
Maximum drain-source on-resistance 0.25 Ω 0.11 Ω 0.22 Ω 0.35 Ω 0.55 Ω 0.25 Ω 0.095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type P-CHANNEL P-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL P-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1 1 1 1
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
package instruction - FLANGE MOUNT, R-PSFM-T3 - - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Shell connection - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
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