Power Field-Effect Transistor, 12A I(D), 600V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN
| Parameter Name | Attribute value |
| Objectid | 1445016643 |
| Parts packaging code | TO-3PB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | Single |
| Minimum drain-source breakdown voltage | 600 V |
| Maximum drain current (Abs) (ID) | 12 A |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.8 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 48 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| 2SK2630 | 2SK2629 | TS9650 | TS9654 | TS9904 | TS9912 | TS9918 | |
|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 12A I(D), 600V, 0.8ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-65, TO-3PB, 3 PIN | Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-F2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 | 2 | 3 | 3 | 2 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Minimum drain-source breakdown voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Maximum drain current (ID) | 12 A | 10 A | 5 A | 10 A | 3.5 A | 8 A | 7 A |
| Maximum drain-source on-resistance | 0.8 Ω | 1 Ω | 2 Ω | 1 Ω | 2.6 Ω | 1.2 Ω | 1 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-F2 | R-PSFM-T3 | R-PSFM-T3 |
| Number of terminals | 3 | 3 | 3 | 3 | 2 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | YES | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | FLAT | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Parts packaging code | TO-3PB | TO-3PB | SFM | SFM | - | SFM | TO-220FI |
| Configuration | Single | Single | SINGLE | SINGLE | - | SINGLE | SINGLE |
| JEDEC-95 code | - | - | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB |
| Number of components | - | - | 1 | 1 | - | 1 | 1 |
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