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BA482T/R

Description
DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode
CategoryDiscrete semiconductor    diode   
File Size34KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BA482T/R Overview

DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode

BA482T/R Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage35 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance1.2 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1.2 V
frequency bandVERY HIGH FREQUENCY
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current100 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum reverse current0.1 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BA482; BA483; BA484
Band-switching diodes
Product specification
Supersedes data of January 1982
1996 Apr 17

BA482T/R Related Products

BA482T/R BA482 BA483 BA483T/R BA484 BA484T/R
Description DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Microwave Mixer Diode DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Microwave Mixer Diode DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Microwave Mixer Diode DIODE SILICON, VHF BAND, MIXER DIODE, DO-34, Microwave Mixer Diode
Maker NXP NXP NXP NXP NXP NXP
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 35 V 35 V 35 V 35 V 35 V 35 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum diode capacitance 1.2 pF 1.2 pF 1 pF 1 pF 1.6 pF 1.6 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE MIXER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
frequency band VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY
JEDEC-95 code DO-34 DO-34 DO-34 DO-34 DO-34 DO-34
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 100 A 100 A 100 A 100 A 100 A 100 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
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