2SK3983-01L,S,SJ
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
See to P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
900
900
±2.6
±10.4
±30
2.6
349.1
9.0
40
5
90
1.67
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
W
°C
°C
Remarks
V
GS
=-30V
Note *1
Note *2
Note *3
VDS < 900V
=
Note *4
Tc=25°C
Ta=25°C
Gate(G)
Source(S)
Equivalent circuit schematic
Drain(D)
Note *1 Tch<150°C
=
Note *2 Starting Tch=25°C, I
AS
=1.1A, L=524mH, V
CC
=100V, R
G
=50Ω
E
AS
limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
trr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=900V V
GS
=0V
V
DS
=720V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=1.3A V
GS
=10V
I
D
=1.3A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=1.3A
V
GS
=10V
R
GS
=10
Ω
V
CC
=450V
I
D
=2.6A
V
GS
=10V
I
F
=2.6A V
GS
=0V T
ch
=25°C
I
F
=2.6A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
4.8
2.6
330
44
2.5
10.5
6.5
28
20
13
4.5
4.3
1.00
1.5
4.0
Min.
900
3.0
Typ.
Max.
5.0
25
250
100
6.4
495
66
5.0
15.8
9.8
42
30
19.5
6.5
6.8
1.50
Units
V
V
µA
nA
Ω
S
pF
1.3
ns
nC
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.39
75.0
Units
°C/W
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
Embedded System
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