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BAS82

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size56KB,1 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Download Datasheet Parametric Compare View All

BAS82 Overview

Rectifier Diode,

BAS82 Parametric

Parameter NameAttribute value
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN codeEAR99
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BAS81-83
FEATURES :
* Integrated protection ring against static discharge.
* Low capacitance
* Low leakage current
* Low forward voltage drop
* Low low switching time
* Pb / RoHS Free
SMALL SIGNAL SCHOTTKY DIODE
MiniMELF (SOD-80C)
Cathode Mark
φ
0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Mounting Pad Layout
0.049 (1.25)Min.
0.098 (2.50)
Max.
MECHANICAL DATA :
Case:
MiniMELF Glass Case (SOD-80C)
Weight:
approx. 0.05g
0.197 (5.00)
REF
0.079 (2.00)Min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics
(Rating at 25
°
C ambient temperature unless otherwise specified
.)
Parameter
BAS81
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Forward Surge Current at tp = 1 s
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
Note: (1) on PC board 50 mm x 50mm x 1.6mm.
Symbol
BAS82
BAS83
I
F
I
FRM
I
FSM
R
θ
JA
T
J
T
STG
V
R
Value
40
50
60
30
150
500
320
(1)
125
-65 to + 150
Unit
V
mA
mA
mA
°C/W
°C
°C
Electrical Characteristics
Parameter
Forward Voltage
Reverse Current
Diode Capacitance
(Ta = 25 °C unless otherwise noted)
Symbol
V
F
I
R
Cd
Test Condition
I
F
= 0.1mA
I
F
= 1.0mA
I
F
= 15mA
V
R
= V
Rmax
V
R
= 1V, f = 1MHz
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
0.33
0.41
1.0
200
1.6
Unit
V
nA
pF
Page 1 of 1
Rev. 00 : February 19, 2009

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BAS82 BAS81
Description Rectifier Diode, Rectifier Diode,
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant

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