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BAS82T/R

Description
DIODE 0.03 A, 50 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size49KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAS82T/R Overview

DIODE 0.03 A, 50 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BAS82T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionHERMETIC SEALED, GLASS PACKAGE-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current0.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.03 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
Maximum reverse current0.2 µA
surface mountYES
technologySCHOTTKY
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D121
BAS81; BAS82; BAS83
Schottky barrier diodes
Product specification
Supersedes data of 1996 Sep 30
1998 Jun 24

BAS82T/R Related Products

BAS82T/R BAS81T/R BAS83T/R BAS83/T3
Description DIODE 0.03 A, 50 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.03 A, 40 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.03 A, 60 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.03 A, 60 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
Is it Rohs certified? conform to conform to conform to conform to
Maker NXP NXP NXP NXP
package instruction HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2 HERMETIC SEALED, GLASS PACKAGE-2
Contacts 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
Maximum non-repetitive peak forward current 0.5 A 0.5 A 0.5 A 0.5 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 0.03 A 0.03 A 0.03 A 0.03 A
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V 40 V 60 V 60 V
Maximum reverse current 0.2 µA 0.2 µA 0.2 µA 0.2 µA
surface mount YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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