2SK3982-01MR
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Low on-resistance
Low driving power
High voltage
TO-220F
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
Ratings
900
900
2.6
±10.4
±30
2.6
349.1
3.2
40
5
32
2.16
+150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
W
°C
°C
Remarks
VGS=-30V
Note *1
Note *2
Note *3
VDS < 900V
=
Note *4
Tc=25°C
Ta=25°C
Gate(G)
Source(S)
Equivalent circuit schematic
Drain(D)
Operating and storage
T
ch
temperature range
T
stg
-55 to +150
Note *1 Tch< 150°C
=
Note *2 Starting Tch=25°C, I
AS
=1.1A, L=524mH, V
CC
=100V, R
G
=50Ω
E
AS
limited by maximum channel temperrature and avalanche current.
See to ‘Avalanche Energy’ graph.
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
See to ‘Transient Thermal impedance’ graph.
Note *4 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
=
=
=
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
trr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=900V V
GS
=0V
T
ch
=25°C
V
DS
=720V V
GS
=0V T
ch
=125°C
V
GS
=±30V V
DS
=0V
I
D
=1.3A V
GS
=10V
I
D
=1.3A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V I
D
=1.3A
V
GS
=10V
R
GS
=10
Ω
V
CC
=450V
I
D
=2.6A
V
GS
=10V
I
F
=2.6A V
GS
=0V T
ch
=25°C
I
F
=2.6A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Min.
900
3.0
Typ.
Max.
5.0
25
250
100
6.4
495
66
5.0
15.8
9.8
42
30
19.5
6.5
6.8
1.50
Units
V
V
µA
nA
Ω
S
pF
1.3
4.8
2.6
330
44
2.5
10.5
6.5
28
20
13
4.5
4.3
1.00
1.5
4.0
ns
nC
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
3.906
58.0
Units
°C/W
°C/W
http://www.fujielectric.co.jp/fdt/scd/
1
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