2SK2662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2662
DC−DC Converter, Relay Drive and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement−mode
: R
DS (ON)
=
1.35 Ω
(typ.)
Unit: mm
: |Y
fs
| = 4.0 S (typ.)
: I
DSS
=
100
µA (max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
=
20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
±30
5
20
35
180
5
3.5
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
3.57
62.5
Unit
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
12.2 mH, R
G
=
25
Ω,
I
AR
=
5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-08-09
2SK2662
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±25 V, V
DS
= 0 V
I
G
= ±10 µA, V
DS
= 0 V
V
DS
= 500 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 2.5 A
Min
—
±30
—
500
2.0
—
2.5
—
—
—
—
Typ.
—
—
—
—
—
1.35
4.0
780
60
200
12
Max
±10
—
100
—
4.0
1.50
—
—
—
—
—
pF
Unit
µA
V
µA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
25
—
ns
—
15
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
—
—
—
—
60
17
11
6
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 5 A, V
GS
= 0 V
I
DR
= 5 A, V
GS
= 0 V
dI
DR
/ dt = 100 A / µs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
1400
9
Max
5
20
−1.7
—
—
Unit
A
A
V
ns
µC
Marking
2
2002-08-09
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
