They are silicon planar epitaxial PNP transistors mounted in TO-18 metal package.
The BC261 is intended for audio amplifier driver tages.
The BC262 is intended for general purpose applications.
The BC262 is intended for low noise, high gain pre-amplifier tage.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
P
D
T
J
T
Stg
Collector-Emitter Voltage (I
B
=0)
Collector- Emitter Voltage (V
BE
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Collector Peak Current
Total Power Dissipation
@ T
amb
= 25°
Junction Temperature
Storage Temperature range
BC261 BC262 BC263
-45
-50
-25
-25
-30
-30
-5
-100
-200
300
175
-55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
V
CB
=-45 V
V
CB
= -45 V
T
j
= 150°C
V
CB
=-20 V
V
CB
= -20 V
T
j
= 150°C
BC261
BC261
BC262
BC263
BC262
BC263
BC261
BC262
BC263
BC261
BC262
BC263
BC261
BC262
BC263
Min
-
-
-
-
-45
-25
-25
-50
-30
-30
-5
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-50
-50
-50
-50
-
-
-
-
-
-
-
Unit
nA
µA
nA
µA
V
I
CBO
Collector Cutoff Current
I
E
= 0
V
CEO
Collector-Emitter
Breakdown Voltage
I
C
= -2 mA
I
B
= 0
V
CES
Collector- Emitter Voltage I
C
= -10 µA
V
BE
= 0
(V
BE
=0)
Emitter-Base Breakdown I
E
= -10 µA
I
C
= 0
Voltage
V
V
EBO
V
1|3
18/10/2012
COMSET SEMICONDUCTORS
PNP BC261 – BC262 – BC263
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
BC261
BC262
BC263
BC261
I
C
=-100 mA
BC262
I
B
=-5 mA
BC263
BC261
I
C
=-10 mA
BC262
I
B
=-0.5 mA
BC263
BC261
I
C
=-100 mA
BC262
I
B
=-5 mA
BC263
BC261A
BC262A
BC263A
BC261B
I
C
= -2 mA
BC262B
V
CE
= 5 V
BC263B
f = 1 KHz
BC261C
BC262C
BC263C
BC261
I
C
=-10 mA
V
CE
=-5 V
BC262
f = 100 MHz BC263
I
C
= -200 µA BC261
V
CE
=-5 V
BC262
f = 1kHz
R
g
=2kΩ
BC263
I
C
=-10 mA
I
B
=-0.5 mA
I
E
= 0
V
CB
=-10 V
f = 1MHz
BC261
BC262
BC263
Min
-
Typ
-
Max
-300
Unit
V
CE(SAT)
Collector-Emitter
saturation Voltage
-
-500
-
mV
-
-
-900
V
BE(SAT)
Base-Emitter Saturation
Voltage
-
-850
-
125
-
260
H
fe
Small Signal Current
Gain
240
-
500
-
450
-
900
f
T
Transition frequency
150
-
-
-
-
-
-
-
-
-
-
10
10
4
6
MHz
F
Noise figure
db
C
C
Collector capacitance
pF
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
500
200
Unit
°C/W
°C/W
2|3
18/10/2012
PNP BC261 – BC262 – BC263
ECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
Pin 1 :
Pin 2 :
Pin 3 :
Case :
12.7
-
0.9
-
-
-
2.54
-
-
45°
max
-
0.49
-
5.3
4.9
5.8
-
1.2
1.16
-
emitter
base
Collector
Collector
Revised November 2013
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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