DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX45; BDX47
PNP Darlington transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 02
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Industrial switching applications such as:
– print hammers
handbook, halfpage
BDX45; BDX47
PINNING
PIN
1
2
3
emitter
collector, connected to metal part of
mounting surface
base
DESCRIPTION
– solenoids
– relay and lamp drivers.
DESCRIPTION
PNP Darlington transistor in a TO-126; SOT32 plastic
package. NPN complements: BDX42 and BDX44.
1
2
3
Top view
1
2
3
MAM350
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BDX45
BDX47
V
CES
collector-emitter voltage
BDX45
BDX47
I
C
P
tot
h
FE
f
T
collector current (DC)
total power dissipation
DC current gain
transition frequency
T
amb
≤
25
°C
T
mb
≤
100
°C
I
C
=
−150
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−10
V
I
C
=
−500
mA; V
CE
=
−5
V; f = 100 MHz
V
BE
= 0
−
−
−
−
−
1000
2000
−
−
−
−
−
−
−
−
200
−45
−80
−1
1.25
5
−
−
−
MHz
V
V
A
W
W
open emitter
−
−
−
−
−60
−90
V
V
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Jul 02
2
Philips Semiconductors
Product specification
PNP Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BDX45
BDX47
V
CES
collector-emitter voltage
BDX45
BDX47
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
T
mb
≤
100
°C
open collector
V
BE
= 0
−
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BDX45; BDX47
MIN.
MAX.
−60
−90
−45
−80
−5
−1
−2
−100
1.25
5
+150
150
+150
V
V
V
V
V
A
A
UNIT
mA
W
W
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
CONDITIONS
in free air
VALUE
100
10
UNIT
K/W
K/W
1997 Jul 02
3
Philips Semiconductors
Product specification
PNP Darlington transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
BDX45
BDX47
I
CES
collector cut-off current
BDX45
BDX47
I
EBO
h
FE
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
=
−45
V
V
BE
= 0; V
CE
=
−80
V
I
C
= 0; V
EB
=
−4
V
V
CE
=
−10
V; see Fig. 2
I
C
=
−150
mA
I
C
=
−500
mA
V
CEsat
collector-emitter saturation
voltage
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−500
mA; I
B
=
−0.5
mA; T
j
= 150
°C
I
C
=
−1
A; I
B
=
−4
mA
I
C
=
−1
A; I
B
=
−4
mA; T
j
= 150
°C
V
BEsat
f
T
t
on
t
d
t
r
t
off
t
s
t
f
base-emitter saturation voltage
transition frequency
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−1
A; I
B
=
−4
mA
I
C
=
−500
mA; V
CE
=
−5
V; f = 100 MHz
I
Con
=
−500
mA; I
Bon
=
−0.5
mA;
I
Boff
= 0.5 mA
Switching times (between 10% and 90% levels);
see Fig.3
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
−
−
−
I
E
= 0; V
CB
=
−60
V
I
E
= 0; V
CB
=
−90
V
−
−
CONDITIONS
BDX45; BDX47
MIN.
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
200
−
−
−
−
−
−
MAX. UNIT
−100
−100
−50
−50
−50
−
−
−1.3
−1.3
−1.6
−1.6
−1.9
−2.2
−
V
V
V
V
V
V
MHz
nA
nA
nA
nA
nA
1000
2000
−
−
−
−
−
−
−
500
200
300
700
550
150
ns
ns
ns
ns
ns
ns
1997 Jul 02
4
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
handbook, full pagewidth
6000
MGD839
hFE
5000
4000
3000
2000
1000
0
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
V
CE
=
−10
V.
Fig.2 DC current gain; typical values.
andbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−10
V; T = 200
µs;
t
p
= 6
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18
Ω.
V
BB
= 1.8 V; V
CC
=
−10.7
V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1997 Jul 02
5
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