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2SK2714

Description
Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size142KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

2SK2714 Overview

Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

2SK2714 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220FN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Transistors
Switching (500V, 10A)
2SK2714
FFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V
GSS
) guaran-
teed to be
±30V.
5) Easily designed drive circuits.
6) Easy to parallel.
FStructure
Silicon N-channel
MOSFET
FExternal
dimensions (Units: mm)
FAbsolute
maximum ratings (Ta = 25_C)
FPackaging
specifications
138
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