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BF989

Description
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerYAGEO
Websitehttp://www.yageo.com/
Download Datasheet Parametric View All

BF989 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET

BF989 Parametric

Parameter NameAttribute value
MakerYAGEO
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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