Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Technical Data
ATF-33143
Features
• Low Noise Figure
• Excellent Uniformity in
Product Specifications
• Low Cost Surface Mount
Small Plastic Package
SOT-343 (4 lead SC-70)
• Tape-and-Reel Packaging
Option Available
Surface Mount Package
SOT-343
Description
Agilent’s ATF-33143 is a high
dynamic range, low noise,
PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Pin Connections and
Package Marking
Specifications
• 0.5 dB Noise Figure
• 15 dB Associated Gain
• 22 dBm Output Power at
1 dB Gain Compression
• 33.5 dBm Output 3
rd
Order
Intercept
SOURCE
3Px
1.9 GHz; 4V, 80 mA (Typ.)
DRAIN
SOURCE
Based on its featured perfor-
mance, ATF-33143 is suitable for
applications in cellular and PCS
base stations, LEO systems,
MMDS, and other systems requir
ing super low noise figure with
good intercept in the 450 MHz to
10 GHz frequency range.
GATE
Note:
Top View. Package marking
provides orientation and identification.
“3P” = Device code
“x” = Date code character. A new
character is assigned for each month, year.
Applications
• Low Noise Amplifier and
Driver Amplifier for
Cellular/PCS Base Stations
• LNA for WLAN, WLL/RLL,
LEO, and MMDS
Applications
• General Purpose Discrete
PHEMT for Other Ultra Low
Noise Applications
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ATF-33143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max
T
CH
T
STG
θ
jc
Parameter
Drain - Source Voltage
[2]
Gate - Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[4]
RF Input Power
Channel Temperature
[5]
Storage Temperature
Thermal Resistance
[6]
Units
V
V
V
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
5.5
-5
-5
I
dss [3]
600
20
160
-65 to 160
145
Notes:
1. Operation of this device above any on
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. V
GS
= 0 V
4. Source lead temperature is 25°C.
Derate 6 mW/
°C
for T
L
> 60°C.
5. Please refer to failure rates in reliabil
section to assess the reliability impac
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
[8, 9]
500
+0.6 V
120
100
80
Cpk = 1.7
Std = 0.05
400
I
DS
(mA)
300
0V
-3 Std
60
+3 Std
200
40
100
–0.6 V
20
0
0.2
0
0
2
4
V
DS
(V)
6
8
0.3
0.4
0.5
NF (dB)
0.6
0.7
0.8
Figure 1. Typical Pulsed I-V Curves
[7]
.
(V
GS
= -0.2 V per step)
100
Cpk = 1.21
Std = 0.94
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
120
100
80
Cpk = 2.3
Std = 0.2
80
60
-3 Std
+3 Std
60
-3 Std
+3 Std
40
40
20
20
0
29
31
33
OIP3 (dBm)
35
37
0
13
14
15
GAIN (dB)
16
17
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, V
GS
may
swing positive and the drain current may
exceed I
dss
. These conditions are
acceptable as long as the maximum P
diss
and P
in max
ratings are not exceeded.
8. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
9. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production
2
test requirements. Circuit losses have
been de-embedded from actual
measurements.
10. The probability of a parameter being
between
±1σ
is 68.3%, between
±2σ
is
95.4% and between
±3σ
is 99.7%.
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ATF-33143 DC Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
I
dss [1]
V
P [1]
I
d
g
m[1]
I
GDO
I
gss
NF
Parameters and Test Conditions
Units Min. Typ.
[2]
Saturated Drain Current
V
DS
= 1.5 V, V
GS
= 0 V mA 175 237
Pinchoff Voltage
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
-0.65 -0.5
Quiescent Bias Current
V
GS
= -0.5 V, V
DS
= 4 V mA
—
80
Transconductance
V
DS
= 1.5 V, g
m
= I
dss
/V
P
mmho 360 440
Gate to Drain Leakage Current
V
GD
= 5 V
µA
Gate Leakage Current
V
GD
= V
GS
= -4 V
µA
—
42
f = 2 GHz V
DS
= 4 V, I
DS
= 80 mA
dB
0.5
V
DS
= 4 V, I
DS
= 60 mA
0.5
Noise Figure
f = 900 MHz V
DS
= 4 V, I
DS
= 80 mA
dB
0.4
V
DS
= 4 V, I
DS
= 60 mA
0.4
f = 2 GHz V
DS
= 4 V, I
DS
= 80 mA
dB 13.5
15
V
DS
= 4 V, I
DS
= 60 mA
15
Associated Gain
[3]
f = 900 MHz V
DS
= 4 V, I
DS
= 80 mA
dB
21
V
DS
= 4 V, I
DS
= 60 mA
21
f = 2 GHz V
DS
= 4 V, I
DS
= 80 mA dBm 30
33.5
5 dBm Pout/Tone V
DS
= 4 V, I
DS
= 60 mA
32
Output 3
rd
Order
Intercept Point
[3]
f = 900 MHz V
DS
= 4 V, I
DS
= 80 mA dBm
32.5
5 dBm Pout/Tone V
DS
= 4 V, I
DS
= 60 mA
31
f = 2 GHz V
DS
= 4 V, I
DS
= 80 mA dBm
22
V
DS
= 4 V, I
DS
= 60 mA
21
1 dB Compressed
Compressed Power
[3]
f = 900 MHz V
DS
= 4 V, I
DS
= 80 mA dBm
21
V
DS
= 4 V, I
DS
= 60 mA
20
Max
305
-0.35
—
—
1000
600
0.8
16.5
G
a
OIP3
P
1dB
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag
= 0.20
Γ_ang
= 124°
(0.3 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P
1dB
, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
3
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ATF-33143 Typical Performance Curves
40
40
2V
3V
4V
OIP3, IIP3 (dBm)
20
OIP3, IIP3 (dBm)
2V
3V
4V
30
30
20
10
10
0
0
20
40
60
I
DSQ
(mA)
80
100
120
0
0
20
40
60
I
DSQ
(mA)
80
100
120
Figure 6. OIP3, IIP3 vs. Bias
[1]
at
2GHz.
25
Figure 7. OIP3, IIP3 vs. Bias
[1]
at
900 MHz.
25
20
20
P
1dB
(dBm)
15
P
1dB
(dBm)
2V
3V
4V
15
10
10
5
5
2V
3V
4V
0
0
20
40
60
I
DSQ
(mA)
80
100
120
0
0
20
40
60
I
DSQ
(mA)
80
100
120
Figure 8. P
1dB
vs. Bias
[1,2]
at 2 GHz.
Figure 9. P
1dB
vs. Bias
[1,2]
Tuned for NF
@ 4V, 80mA at 900MHz.
1.4
1.2
1.0
0.8
0.6
22
21
1.2
1.0
0.8
G
a
19
18
17
16
0
20
40
60
I
DSQ
(mA)
80
100
NF
16
15
G
a
14
NOISE FIGURE (dB)
20
13
12
11
10
0
20
40
60
I
DSQ
(mA)
80
100
0.6
0.4
2V
3V
4V
NF
2V
3V
4V
0.4
0.2
120
0.2
0
120
Figure 10. NF and G
a
vs. Bias
[1]
at
2GHz.
Figure 11. NF and G
a
vs. Bias
[1]
at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4
80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of I
DSQ
the device is running closer to class B as power output approache
P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
4
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NOISE FIGURE (dB)
G
a
(dB)
G
a
(dB)
ATF-33143 Typical Performance Curves,
continued
1.5
80 mA
60 mA
30
25
20
G
a
(dB)
80 mA
60 mA
1.0
F
min
(dB)
15
10
5
0.5
0
0
2
4
6
8
10
FREQUENCY (GHz)
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. F
min
vs. Frequency and
Current at 4V.
25
25°C
-40°C
85°C
Figure 13. Associated Gain vs.
Frequency and Current at 4V.
2.0
40
25°C
-40°C
85°C
P
1dB
, OIP3 (dBm)
20
G
a
(dB)
1.5
NOISE FIGURE (dB)
35
30
15
1.0
25
10
0.5
20
5
0
2
4
6
8
FREQUENCY (GHz)
0
10
15
0
2000
4000
6000
8000
FREQUENCY (MHz)
Figure 14. F
min
and G
a
vs. Frequency
and Temp at V
DS
= 4V, I
DS
= 80mA.
35
OIP3, P
1dB
(dBm), GAIN (dB)
Figure 15. P
1dB
, OIP3 vs. Frequency
and Temp at V
DS
= 4V, I
DS
= 80mA.
35
OIP3, P
1dB
(dBm), GAIN (dB)
3.5
P
1dB
OIP3
Gain
NF
30
25
20
15
10
5
0
0
20
40
60
I
DSQ
(mA)
80
3.0
NOISE FIGURE (dB)
30
25
20
15
10
5
0
0
20
40
60
I
DSQ
(mA)
80
100
P
1dB
OIP3
Gain
NF
3
NOISE FIGURE (dB)
2.5
2.0
1.5
1.0
0.5
2
1
100
0
120
0
120
Figure 16. OIP3, P
1dB
, NF and Gain vs.
Bias
[1,2]
at 3.9 GHz.
Figure 17. OIP3, P
1dB
, NF and Gain vs.
Bias
[1,2]
at 5.8 GHz.
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off
between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses ha
been de-embedded from actual measurements.
2. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of I
dsq
the device is running closer to class B as power output approaches
P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
5
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