LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB751G-40T1G
Applications
General rectification
Features
1) Small power mold type.
(SO D-723)
2) Low V
F
3) High reliability
4) Pb-Free package is available
5) S- Prefix for Automotive and O ther Applications Req uiring
Uniq ue Site and Control Change Req uirements;
AE C -Q 101 Q ualified and PPAP Capable.
Construction
Silicon epitaxial planar
SOD-723
LRB751G-40T1G
S-LRB751G-40T1G
1
2
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
30
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
Electrical characteristic
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
2
Max.
0.37
0.5
-
Unit
V
µA
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V , f=1MHz
DEVICE MARKING AND ORDERING INFORMATION
Device
LRB751G-40T1G
S-LRB751G-40T1G
Marking
5
Shipping
4000/Tape&Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
Electrical characteristic curves
(Ta=25
O
C)
100
100000
Ta=75℃
Ta=125℃
1
0.1
0.01
0.001
0
100 200 300 400 500 600 700 800
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
Ta=25℃
Ta=-25℃
Ta=125℃
10
f=1MHz
FORWARD CURRENT:IF(mA)
Ta=75℃
1000
Ta=25℃
100
10
1
0
5
10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
40
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
0REVERSE CURRENT:IR(nA)
10000
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
330
1000
10
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
320
310
300
290
AVE:304.2mV
280
VF DISPERSION MAP
700
600
500
400
300
200
100
0
AVE:111.0nA
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
IF=1mA
n=30pcs
900
800
Ta=25℃
VR=30V
n=30pcs
9
8
7
6
5
4
3
2
1
0
AVE:1.81pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
IR DISPERSION MAP
Ct DISPERSION MAP
20
30
10
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
25
20
15
10
5
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
15
1cyc
8.3ms
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
8
6
4
2
0
1
Ifsm
8.3ms 8.3ms
1cyc
10
AVE:3.40A
5
AVE:11.7ns
0
IFSM DISRESION MAP
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
Electrical characteristic curves
(Ta=25
O
C)
10
1000
Ifsm
8
t
THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
6
4
2
TRANSIENT
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
1ms
time
0
0.1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1
100
10
0.001
300us
10
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1000
0.05
0.04
0.003
REVERSE POWER
DISSIPATION:P
R
(W)
FORWARD POWER
DISSIPATION:Pf(W)
0.03
0.02
0.01
0
0
D=1/2
Sin(θ＝180)
DC
0.002
DC
Sin(θ＝180)
D=1/2
0.001
0
0.01
0.02
0.03
0.04
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.05
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.1
0.1
0A
0V
Io
t
T
VR
D=t/T
VR=20V
Tj=125℃
0.08
0.06
0.04
0.02
Sin(θ＝180)
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
0A
0V
Io
t
T
VR
D=t/T
VR=20V
Tj=125℃
AVERAGE RECTIFI
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.08
0.06
0.04
0.02
Sin(θ＝180)
0
DC
D=1/2
DC
D=1/2
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G , S-LRB751G-40T1G
SOD−723
D
−X−
−Y−
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIM
A
b
c
D
E
H
E
L
MILLIMETERS
INCHES
MIN
NOM MAX MIN
NOM MAX
0.49
0.52
0.55
0.019 0.020 0.022
0.25
0.28
0.32 0.0098 0.011 0.013
0.08
0.12
0.15 0.0032 0.0047 0.0059
0.95
1.00
1.05
0.037 0.039 0.041
0.55
0.60
0.65
0.022 0.024 0.026
1.35
1.40
1.45
0.053 0.055 0.057
0.15
0.20
0.25
0.006 0.0079 0.010
b
2X
0.08 (0.0032) X Y
A
c
L
H
E
SOLDERING FOOTPRINT*
1.1
0.043
0.45
0.0177
0.50
0.0197
SCALE 10:1
mm
inches
Rev.O 4/4
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