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2SJ415TL

Description
Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size53KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SJ415TL Overview

Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ415TL Parametric

Parameter NameAttribute value
Objectid1454194751
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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