SO
T4
57
BAS21VD
High-voltage switching diodes
Rev. 2 — 29 June 2011
Product data sheet
1. Product profile
1.1 General description
Triple high-voltage switching diodes, encapsulated in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: t
rr
50 ns
Reverse voltage: V
R
200 V
Repetitive peak reverse voltage:
V
RRM
250 V
Small SMD plastic package
Low capacitance: C
d
5 pF
AEC-Q101 qualified
Repetitive peak forward current:
I
FRM
1 A
1.3 Applications
High-voltage switching in surface-mounted circuits
Automotive
Communication
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
I
R
V
R
t
rr
[1]
[2]
[3]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[3]
Conditions
[1][2]
Min
-
-
-
-
Typ
-
25
-
16
Max
200
100
200
50
Unit
mA
nA
V
ns
V
R
= 200 V
[1]
Pulse test: t
p
300
s;
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA.
NXP Semiconductors
BAS21VD
High-voltage switching diodes
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
cathode (diode 2)
cathode (diode 3)
anode (diode 3)
anode (diode 2)
anode (diode 1)
1
2
3
006aab241
Simplified outline
6
5
4
Graphic symbol
6
5
4
1
2
3
3. Ordering information
Table 3.
Ordering information
Package
Name
BAS21VD
SC-74
Description
plastic surface-mounted package; 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
BAS21VD
Marking codes
Marking code
B5
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak
reverse voltage
reverse voltage
forward current
repetitive peak
forward current
non-repetitive peak
forward current
t
p
1 ms;
25 %
square wave
t
p
= 10
s
t
p
= 100
s
t
p
= 10 ms
[2]
[1][3]
Parameter
Conditions
Min
-
-
-
-
Max
250
200
200
1
Unit
V
V
mA
A
-
-
-
16
8
2
A
A
A
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
2 of 12
NXP Semiconductors
BAS21VD
High-voltage switching diodes
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
25
C
[3]
[4]
Min
-
-
-
65
65
Max
250
295
150
+150
+150
Unit
mW
mW
C
C
C
Per device; one diode loaded
Pulse test: t
p
300
s;
0.02.
T
j
= 25
C
prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
500
425
140
Unit
K/W
K/W
K/W
Per device; one diode loaded
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
I
R
C
d
t
rr
[1]
[2]
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Conditions
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
C
f = 1 MHz; V
R
= 0 V
[2]
[1]
Min
-
-
-
-
-
-
Typ
-
-
25
-
0.6
16
Max
1
1.25
100
100
5
50
Unit
V
mV
nA
A
pF
ns
Pulse test: t
p
300
s;
0.02.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA.
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
3 of 12
NXP Semiconductors
BAS21VD
High-voltage switching diodes
600
I
F
(mA)
(1)
(2)
mbg384
10
2
I
FSM
(A)
mle165
(3)
400
10
200
0
1
0
1
V
F
(V)
2
1
10
10
2
10
3
10
4
t
p
(μA)
10
5
(1) T
j
= 150
C;
typical values
(2) T
j
= 25
C;
typical values
(3) T
j
= 25
C;
maximum values
Based on square wave currents.
T
j
= 25
C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage
10
2
I
R
(μA)
10
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mbg381
1
(1)
(2)
10
−1
10
−2
0
100
T
j
(°C)
200
(1) V
R
= V
Rmax
; maximum values
(2) V
R
= V
Rmax
; typical values
Fig 3.
Reverse current as a function of junction temperature
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
4 of 12
NXP Semiconductors
BAS21VD
High-voltage switching diodes
0.6
C
d
(pF)
0.5
mle166
300
V
R
(V)
mle167
200
0.4
100
0.3
0.2
0
10
20
30
V
R
(V)
40
0
0
50
100
150
200
T
amb
(°C)
f = 1 MHz; T
j
= 25
C
FR4 PCB, standard footprint
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
300
I
F
(mA)
200
Fig 5.
Reverse voltage as a function of ambient
temperature; derating curve
mbg442
100
0
0
100
T
amb
(˚C)
200
FR4 PCB, standard footprint
Fig 6.
Forward current as a function of ambient temperature; derating curve
BAS21VD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 29 June 2011
5 of 12
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