SRAM Module, 512KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
| Parameter Name | Attribute value |
| Objectid | 1547646699 |
| package instruction | 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 55 ns |
| Other features | BATTERY BACK-UP OPERATION |
| JESD-30 code | R-CDIP-T32 |
| length | 42.4 mm |
| memory density | 4194304 bit |
| Memory IC Type | SRAM MODULE |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 512KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum seat height | 5.1 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| width | 15.24 mm |
京公网安备 11010802033920号
EEWORLD
