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UFZT949TA

Description
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size226KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

UFZT949TA Overview

Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

UFZT949TA Parametric

Parameter NameAttribute value
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

UFZT949TA Related Products

UFZT949TA UFZT948TA UFZT949TC
Description Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Maker Diodes Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 5.5 A 6 A 5.5 A
Collector-emitter maximum voltage 30 V 20 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 100
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 4 4 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 80 MHz 100 MHz
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[i=s] This post was last edited by 158999437 on 2015-5-1 14:59 [/i] The board is also completed, hope to share with you! DC: 0~100V AC: 0~100V DC: 0~1a AC: 0~1a Resistance and current are made by 555 ...
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