Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Zetex Semiconductors |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 6 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | PNP |
| Maximum power consumption environment | 3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 80 MHz |
| VCEsat-Max | 0.45 V |
| FZT948TA | FZT948TC | FZT949TA | FZT949TC | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin |
| Is it Rohs certified? | conform to | conform to | conform to | conform to |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 6 A | 6 A | 5.5 A | 5.5 A |
| Collector-emitter maximum voltage | 20 V | 20 V | 30 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 100 | 100 | 100 |
| JESD-30 code | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| JESD-609 code | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 |
| Polarity/channel type | PNP | PNP | PNP | PNP |
| Maximum power consumption environment | 3 W | 3 W | 3 W | 3 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 80 MHz | 80 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.45 V | 0.45 V | 0.44 V | 0.44 V |
| Maker | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors |
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