FZT788BTA datasheet, PDF - EEWORLD Datasheet

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FZT788BTA: DescriptionPower Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin; CategoryDiscrete semiconductor The transistor; File Size96KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FZT788BTA Overview

Power Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FZT788BTA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
Reach Compliance Code	not_compliant
ECCN code	EAR99
Samacsys Description	Bipolar (BJT) Transistor PNP 15V 3A 100MHz 2W Surface Mount SOT-223
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.5 V

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SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Low equivalent on-resistance;

CE(sat)

93mΩ at 3A

* Gain of 300 at I

=2 Amps and Very low saturation voltage

APPLICATIONS

* Battery powered circuits

COMPLEMENTAY TYPE FZT688B

PARTMARKING DETAIL FZT788B

FZT788B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

CBO

CEO

EBO

tot

stg

TYP.

VALUE

-15

-5

-8

-3

-55 to +150

MAX. UNIT

-0.1

-0.15

-0.25

-0.45

-0.5

-0.9

-0.75

500

400

300

150

100

225

400

1500

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

SYMBOL MIN.

-15

-5

CONDITIONS.

=-100

=-10mA*

=-100

=-10V

=-4V

=-0.5A, I

=-2.5mA*

=-1A, I

=-5mA*

=-2A, I

=-10mA*

=-3A, I

=-50mA*

=-1A, I

=-5mA*

=-1A, V

=-2V*

=-10mA, V

=-2V*

=-1A, V

=-2V*

=-2A, V

=-2V*

=-6A, V

=-2V*

MHz

=-50mA, V

=-5V

f=50MHz

=-0.5V, f=1MHz

=-10V, f=1MHz

=-500mA, I

=-50mA

=-50mA, V

=-10V

Collector-Base Breakdown Voltage V

(BR)CBO

Collector-Emitter Breakdown Voltage V

(BR)CEO

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter Turn-On Voltage

Static Forward Current Transfer

Ratio

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

BE(on)

ibo

obo

off

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

Spice parameter data is available upon request for this device

3 - 244

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