SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 4 - FEBRUARY 1998
FEATURES
*
*
*
*
*
*
V
CEO
= 40V
5 Amp Continuous Current
20 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance;
R
CE(sat)
= 50mΩ at 5A
FZT1051A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C †
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
150
40
5
10
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1051A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL MIN.
V
(BR)CBO
150
TYP.
190
MAX.
UNIT
V
CONDITIONS.
I
C
=100µA
V
CES
150
190
V
I
C
=100µA *
I
C
=10mA
V
CEO
40
60
V
V
CEV
150
190
V
I
C
=100µA, V
EB
=1V
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
I
CBO
I
EBO
I
CES
5
9
V
I
E
=100µA
0.3
0.3
0.3
10
10
10
nA
nA
nA
V
CB
=120V
V
EB
=4V
V
CES
=120V
V
CE(sat)
17
85
140
250
980
25
120
180
340
1100
mV
mV
mV
mV
mV
I
C
=0.2A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
= 20mA*
I
C
=5A, I
B
=100mA*
I
C
=5A, I
B
=100mA*
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
915
1000
mV
I
C
=5A, V
CE
=2V*
h
FE
290
270
130
40
440
450
220
55
155
1200
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=3A, I
B
=30mA, V
CC
=10V
Transition Frequency
f
T
Output Capacitance
Turn-on Time
Turn-off Time
C
obo
t
on
t
off
27
220
540
40
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
FZT1051A
TYPICAL CHARACTERISTICS
1.0
+25°C
1.0
IC/IB=100
0.8
0.8
V
CE(sat)
- (V)
V
CE(sat)
- (V)
0.6
0.4
0.2
0
1m
10m
I
C
-
IC/IB=50
IC/IB=100
IC/IB=200
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+150°C
100m
1
10
100
1m
10m
100m
1
10
100
Collector Current (A)
V
CE(sat)
v I
C
IC - Collector Current (A)
V
CE(sat)
v I
C
750
VCE=2V
+100°C
+25°C
-55°C
1.2
IC/IB=100
h
FE
- Typical Gain
0.9
500
V
BE(sat)
- (V)
0.6
-55°C
+25°C
+100°C
+150°C
250
0.3
0
1m
10m
I
C
-
100m
1
10
100
0
1m
10m
100m
1
10
100
Collector Current (A)
h
FE
v I
C
IC - Collector Current (A)
V
BE(sat)
v I
C
1.6
100
1.2
I
C
- Collector Current (A)
VCE=2V
V
BE(on)
- (V)
10
0.8
0.4
-55°C
+25°C
+100°C
+150°C
1
DC
1s
100ms
10ms
1ms
100us
0
1m
10m
I
C
-
100m
1
10
100
100m
100m
1
10
100
Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
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