FMMT494TC datasheet, PDF - EEWORLD Datasheet

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FMMT494TC: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size120KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FMMT494TC Overview

Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

FMMT494TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995

PARTMARKING DETAIL

7

494

FMMT494

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Breakdown Voltages

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

Collector Cut-Off Currents

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Collector-Base

Breakdown Voltage

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

100

60

20

100

10

MIN.

140

120

5

100

0.2

0.3

1.1

1.0

300

MHz

pF

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

P

tot

T

j

:T

stg

MAX.

VALUE

140

120

5

1

2

200

500

-55 to +150

UNIT

V

nA

V

UNIT

V

A

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=120V

V

CE

=120V

V

EB

=4V

I

C

=250mA, I

B

=25mA*

I

C

=500mA, I

B

=50mA*

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=10V*

I

C

=1mA, V

CE

=10V*

I

C

=250mA, V

CE

=10V*

I

C

=500mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

I

C

=50mA, V

CE

=10V

f=100MHz

V

CB

=10V, f=1MHz

f

T

C

obo

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 121

FMMT494TC Related Products

	FMMT494TC	FMMT494TA
Description	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	10 pF	10 pF
Collector-emitter maximum voltage	120 V	120 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.5 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.3 V	0.3 V

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