SRAM Module, 64KX16, 100ns, CMOS, CDIP40
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | _compli |
| Maximum access time | 100 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T40 |
| JESD-609 code | e0 |
| memory density | 1048576 bi |
| Memory IC Type | SRAM MODULE |
| memory width | 16 |
| Number of terminals | 40 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64KX16 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP40,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.06 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.34 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| Base Number Matches | 1 |
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