Solderable terminals both for power and signal for
easy PCB mounting
•
Easy paralleling due to positive TC of VCEsat
•
Low profile
E1
OUT1
O UT2
Q4
G4
CR2
E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS
SENSE
G4
E4
OUT2
VBUS
0/VBUS
OUT1
E1
G1
0/VBUS
SENSE
NTC2
NTC1
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
A
V
W
150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF75DH120T – Rev 0 January, 2005
Parameter
Collector - Emitter Breakdown Voltage
Max ratings
1200
100
75
150
±20
500
Unit
V
APTGF75DH120T
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(on)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
T
j
= 25°C
V
GE
= 0V
V
CE
= 1200V
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 75A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 2.5 mA
V
GE
= ±20V, V
CE
= 0V
Min
Typ
0.1
4
3.2
3.9
Max
2
3.7
6.5
±500
Unit
mA
V
V
nA
4.5
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5Ω
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5Ω
Min
Typ
5.1
0.7
0.4
120
50
310
20
130
60
360
30
9
4
Max
Unit
nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
I
RM
I
F(A V)
V
F
Maximum Peak Repetitive Reverse Voltage
Test Conditions
T
j
= 25°C
T
j
= 125°C
Tc = 70°C
Min
1200
Typ
Max
250
500
Unit
V
µA
A
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
V
R
=1200V
50% duty cycle
I
F
= 100A
I
F
= 200A
I
F
= 100A
I
F
= 100A
V
R
= 800V
di/dt =200A/µs
I
F
= 100A
V
R
= 800V
di/dt =200A/µs
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
100
2.0
2.3
1.8
420
580
1.2
5.3
2.5
V
t
rr
Q
rr
Reverse Recovery Time
ns
APTGF75DH120T – Rev 0 January, 2005
Reverse Recovery Charge
µC
APT website – http://www.advancedpower.com
2-5
APTGF75DH120T
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.16 K
Min
Typ
68
4080
Max
Unit
kΩ
K
R
T
=
R
25
1
exp
B
25 / 85
T
−
T
25
T: Thermistor temperature
1
R
T
: Thermistor value at T
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Thermal and package characteristics
Junction to Case
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
IGBT
Diode
Min
Typ
Max
0.25
0.6
150
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
-40
-40
-40
To heatsink
M5
Package outline
APT website – http://www.advancedpower.com
3-5
APTGF75DH120T – Rev 0 January, 2005
APTGF75DH120T
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
150
T
J
= 125°C
V
GE
=15V
V
GE
=20V
V
GE
=12V
150
125
100
I
C
(A)
T
J
=25°C
125
100
I
C
(A)
75
50
T
J
=125°C
75
50
25
0
0
1
2
3
V
CE
(V)
4
5
6
V
GE
=9V
25
0
0
1
2
3
4
V
CE
(V)
5
6
Transfert Characteristics
150
125
100
E (mJ)
I
C
(A)
75
50
25
0
5
6
7
8
9
10
11
12
V
GE
(V)
Switching Energy Losses vs Gate Resistance
35
30
25
E (mJ)
20
15
10
5
0
0
10
20
30
40
50
Gate Resistance (ohms)
60
70
Eoff
V
CE
= 600V
V
GE
=15V
I
C
= 75A
T
J
= 125°C
T
J
=25°C
T
J
=125°C
Energy losses vs Collector Current
28
24
20
16
12
8
4
0
0
25
50
75
I
C
(A)
Reverse Bias Safe Operating Area
175
150
100
125
150
Eoff
V
CE
= 600V
V
GE
= 15V
R
G
= 7.5
Ω
T
J
= 125°C
Eon
Eon
125
I
C
(A)
100
75
50
25
0
0
300
600
900
1200
1500
V
CE
(V)
V
GE
=15V
T
J
=125°C
R
G
=7.5
Ω
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.3
Thermal Impedance (°C/W)
0.25
0.2
0.15
0.1
0.05
0
0.00001
0.9
0.7
0.5
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
IGBT
APT website – http://www.advancedpower.com
4-5
APTGF75DH120T – Rev 0 January, 2005
APTGF75DH120T
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
I
C
(A)
80
100
ZVS
hard
switching
ZCS
V
CE
=600V
D=50%
R
G
=7.5
Ω
T
J
=125°C
T
C
=75°C
Forward Characteristic of diode
250
200
150
100
50
0
0
0.5
1
1.5
V
F
(V)
2
2.5
3
T
J
=25°C
I
C
(A)
T
J
=125°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.7
Thermal Impedance (°C/W)
0.6
0.5
0.4
0.3
0.2
0.1
0.5
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Diode
0.9
0.7
0
0.00001
rectangular Pulse Duration (Seconds)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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