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APT1201R4BFLL

Description
Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, TO-247, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size120KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

APT1201R4BFLL Overview

Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, TO-247, 3 PIN

APT1201R4BFLL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeTO-247AD
package instructionTO-247, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)1210 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1200 V
Maximum drain current (Abs) (ID)9 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)36 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
APT1201R4BFLL
APT1201R4SFLL
1200V
9A 1.400
POWER MOS 7
®
R
FREDFET
D
3
PAK
TO-247
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
®
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D
3
PAK Package
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT1201R4BFLL_SFLL
UNIT
Volts
Amps
1200
9
36
±30
±40
300
2.40
-55 to 150
300
9
30
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
1200
1.40
250
1000
±100
3
5
(V
GS
= 10V, I
D
= 4.5A)
Ohms
µA
nA
Volts
3-2004
050-7392 Rev A
Zero Gate Voltage Drain Current (V
DS
= 1200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT1201R4BFLL Related Products

APT1201R4BFLL APT1201R4SFLL
Description Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, TO-247, 3 PIN Power Field-Effect Transistor, 9A I(D), 1200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Microsemi Microsemi
package instruction TO-247, 3 PIN D3PAK, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 1210 mJ 1210 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1200 V 1200 V
Maximum drain current (Abs) (ID) 9 A 9 A
Maximum drain current (ID) 9 A 9 A
Maximum drain-source on-resistance 1.4 Ω 1.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 300 W 300 W
Maximum pulsed drain current (IDM) 36 A 36 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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