GZ Series
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
2.0 to 36V
Power Dissipation
500mW
Zener Diodes
DO-204AH (DO-35 Glass)
Features
• Silicon Planar Power Zener Diodes.
• Voltage spectrum from 2.2V to 38V
• The Zener voltages are graded according to
voltage bands instead of by tolerance.
• Low Zener impedence and low leakage current
• Popular in Asian designs
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Marking:
GS
Type
Grade
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P
d
T
j
T
stg
(T
A
= 25°C unless otherwise noted)
Value
500
–50 to +175
–55 to +175
Unit
mW
°C
°C
Document Number 88354
20-May-02
www.vishay.com
1
GZ Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Maximum V
F
=1.2V at I
F
=200mA
Reverse Current
Dynamic Resistance
r
d
(Ω)
Max
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
40
40
40
40
40
40
15
15
15
15
15
15
15
15
15
20
20
20
20
20
Test Condition
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Zener Voltage V
Z
(V)
Type
GZ2
GZ2
GZ2
GZ3
GZ3
GZ3
GZ3
GZ3
GZ3
GZ3
GZ3
GZ3
GZ4
GZ4
GZ4
GZ4
GZ4
GZ4
GZ4
GZ4
GZ4
GZ5
GZ5
GZ5
GZ5
GZ5
GZ5
GZ5
GZ5
GZ5
GZ6
GZ6
GZ6
GZ6
GZ6
GZ6
GZ6
GZ6
GZ6
GZ7
GZ7
GZ7
GZ7
GZ7
GZ7
GZ7
GZ7
GZ7
GZ9
GZ9
GZ9
GZ9
GZ9
GZ9
Grade
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
Min
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
(1)
Max
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
Test Condition
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
R
(µA)
Max
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test Condition
V
R
(V)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
5.0
5.0
5.0
5.0
5.0
5
1
5.0
20
5
Note:
(1) Tested with 40ms pulse
www.vishay.com
2
Document Number 88354
20-May-02
GZ Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Maximum V
F
=1.2V at I
F
=200mA
Reverse Current
Dynamic Resistance
r
d
(Ω)
Max
20
20
20
25
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
35
40
40
40
45
45
45
55
55
55
60
60
60
65
65
65
70
70
70
80
80
80
100
100
100
120
120
120
140
140
140
Test Condition
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
Zener Voltage V
Z
(V)
Type
GZ9
GZ9
GZ9
GZ11
GZ11
GZ11
GZ11
GZ11
GZ11
GZ11
GZ11
GZ11
GZ12
GZ12
GZ12
GZ12
GZ12
GZ12
GZ12
GZ12
GZ12
GZ15
GZ15
GZ15
GZ16
GZ16
GZ16
GZ18
GZ18
GZ18
GZ20
GZ20
GZ20
GZ22
GZ22
GZ22
GZ24
GZ24
GZ24
GZ27
GZ27
GZ27
GZ30
GZ30
GZ30
GZ33
GZ33
GZ33
GZ36
GZ36
GZ36
Grade
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
A1
A2
A3
B1
B2
B3
C1
C2
C3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
Min
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
34.2
35.3
36.4
(1)
Max
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
14.7
15.1
15.5
15.9
16.5
17.1
17.7
18.3
19.0
19.7
20.4
21.1
21.9
22.6
23.3
24.0
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
35.7
36.8
38.0
Test Condition
I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
I
R
(µA)
Max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test Condition
V
R
(V)
5.0
5.0
5.0
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
9.5
9.5
9.5
9.5
9.5
9.5
9.5
9.5
9.5
11
11
11
12
12
12
13
13
13
15
15
15
17
17
17
19
19
19
21
21
21
23
23
23
25
25
25
27
27
27
Note:(1)
Tested with 40ms pulse
Document Number 88354
20-May-02
www.vishay.com
3
Real-time operating system RTOS
京公网安备 11010802033920号
EEWORLD
