02S_05XC612 02.09.12 14:15 ページ 169
Series
2 Channel Voltage Detectors
NCMOS
Low Power Consumption
N2
Voltage Detectors Built-in
NDetect
Voltage Accuracy : ± 2%
NDetect
Voltage Range
NSOT-25
Package
: 1.5V ~ 5.0V
■Applications
GMemory
battery back-up circuitry
GMicroprocessor
reset circuits
GPower
failure detection
GSystem
power-on reset circuits
GSystem
battery life monitors and re-charge voltage monitors
GDelay
circuitry
2
■General Description
The XC612 series consist of 2 voltage detectors, in 1 mini-molded, SOT-
25 package.
The series provides accuracy and low power consumption through
CMOS processing and laser trimming and consists of a highly accurate
voltage reference source, 2 comparators, hysteresis and output driver
circuits.
The input (V
IN1
) for voltage detector 1 (V
D1
) dually functions as the power
supply pin for both detector 1 (V
D1
) and detector 2 (V
D2
).
■Features
Highly accurate
Low-power consumption
Detect voltage
: Set-up voltage accuracy ±2%
: Typ.2.0µA (V
IN1
=V
IN2
=2.0V, quiescent state)
: 1.5V ~ 5.0V programmable in
0.1V steps. Detector’s voltages
can be set-up independently
Conditionaly,
XC612N : V
DET1
>V
DET2
XC612D, XC612E : V
DET1
≥V
DET2
,
V
DET1
<V
DET2
Operating Voltage Range
: 1.0V ~ 10.0V
Temperature characteristics
: ±100ppm/°C
Output configuration
: N-channel open drain
Small package
: SOT-25 (150mW) mini-mold
* CMOS Output is under development
■Typical Application Circuit
V
IN1
V
IN2
V
DET1
V
IN
R
■Typical Performance
Characteristic
SUPPLY CURRENT vs. INPUT VOLTAGE
ＸＣ６１２Ｎ３６３２
6.0
(V
IN1
＝V
IN2
)
Supply Current: Iss (µA)
V
DET2
V
SS
5.0
4.0
3.0
2.0
1.0
0
0
2
4
6
8
10
-30℃
Ta=80℃
25℃
R=100kΩ
V
DET1
：CMOS, V
DET2
：N-ch Open drain
Input Voltage: V
IN1
(V)
169
02S_05XC612 02.09.12 14:15 ページ 170
XC612
Series
■Pin Configuration
V
DET2
5
Ｖ
IN2
4
■Pin Assignment
PIN NUMBER
1
2
PIN NAME
V
DET1
V
IN1
V
SS
V
IN2
V
DET2
FUNCTION
Voltage Detector 1 output
Detector 1 input,
Power Supply.
Ground
Voltage Detector 2 Input
Voltage Detector 2 Output
1
2
3
V
SS
3
4
5
V
DET1
V
IN1
2
SOT-25
（TOP VIEW）
■Product Classification
GSelection
Guide
Type
XC612N
XC612D
XC612E
V
DET1
N-ch Open drain
N-ch Open drain
CMOS
V
DET2
N-ch Open drain
CMOS
N-ch Open drain
GOrdering
Information
XC612 x x x x x x x
↑ ↑ ↑ ↑↑
a b c de
DESIGNATOR
a
DESCRIPTION
Output Configuration:
N=N-Channel Open Drain
D=V
DET1
N-ch Open Drain, V
DET2
CMOS
E=V
DET1
CMOS, V
DET2
N-ch Open Drain
Detect Voltage (V
DET1
)
e.g.25=2.5V
38=3.8V
Detect Voltage (V
DET2
)
e.g.33=3.3V
50=5.0V
e
Device Orientation
R=Embossed Tape (Orientation of Device: Right)
L=Embossed Tape (Orientation of Device: Left)
DESIGNATOR
DESCRIPTION
d
Package Type:
M=SOT-25
b
c
170
02S_05XC612 02.09.12 14:15 ページ 171
XC612
Series
■Packaging Information
GSOT-25
0.15
-0.05
0.4
+0.1
-0.05
+0.1
0∼0.1
2.8±0.2
1.6
+0.2
-0.1
2
（0.95）
1.9±0.2
2.9±0.2
1.1±0.1
■Marking
①②③④
SOT-25
(TOP VIEW)
q
Represents the output configuration
DESIGNATOR
N
D
E
CONFIGURATION
V
DET1
N-ch Open drain
N-ch Open drain
CMOS
V
DET2
N-ch Open drain
CMOS
N-ch Open drain
PRODUCT NAME
XC612N****M*
XC612D****M*
XC612E****M*
we
Represents the entry order.
r
Denotes the production lot number
0 to 9, A to Z repeated. (G.I.J.O.Q.W excepted)
0.2min
171
02S_05XC612 02.09.12 14:15 ページ 173
XC612
Series
■Absolute Maximum Ratings
Ta＝25℃
PARAMETER
Input Voltage V
IN1
Input Voltage V
IN2
Output Voltage V
DET1
(N-ch Open drain)
Output Voltage V
DET1
(CMOS)
Output Current V
DET1
Output Voltage V
DET2
(N-ch Open drain)
Output Voltage V
DET2
(CMOS)
Output Current V
DET2
Power Dissipation
Operating Ambient Temperature
Storage Temperature
SYMBOL
V
IN1
V
IN2
V
VDET1
V
VDET1
I
VDET1
V
VDET2
V
VDET2
I
VDET2
Pd
Topr
Tstg
CONDITIONS
12
12
V
SS
−0.3∼12
V
SS
−0.3∼V
IN1
＋0.3
50
V
SS
−0.3∼12
V
SS
−0.3∼V
IN1
＋0.3
50
150
−30∼＋80
−40∼＋125
UNITS
V
V
V
V
mA
V
V
mA
mW
℃
℃
2
173
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
