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VS-ST173S12MEP2

Description
Silicon Controlled Rectifier,
CategoryAnalog mixed-signal IC    Trigger device   
File Size1MB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

VS-ST173S12MEP2 Overview

Silicon Controlled Rectifier,

VS-ST173S12MEP2 Parametric

Parameter NameAttribute value
MakerVishay
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Trigger device typeSCR
VS-ST173S Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 175 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
TO-209AB (TO-93)
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
J
Package
Diode variation
175 A
1000 V, 1200 V
2.07 V
4680 A
4900 A
200 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Single SCR
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
175
T
C
85
275
4680
4900
110
100
1000 to 1200
15 to 25
-40 to 125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1100
1300
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
40
VS-ST173S
Revision: 11-Mar-14
Document Number: 94367
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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