5962-3826707QXA datasheet, PDF

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5962-3826707QXA: DescriptionEEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, CERDIP-32; Categorystorage storage; File Size322KB，14 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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5962-3826707QXA Overview

EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, CERDIP-32

5962-3826707QXA Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compli
ECCN code	3A001.A.2.C
Maximum access time	120 ns
Other features	100 YEAR DATA RETENTION
Data retention time - minimum	100
JESD-30 code	R-CDIP-T32
memory density	1048576 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	5.715 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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EEPROM

AS28C010

128K x 8 EEPROM

EEPROM Memory

5 Volt, Byte Alterable

AVAILABLE AS MILITARY

SPECIFICATIONS

SMD 5962-38267

MIL-STD-883

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F), 32-Pin CerDIP (CW)

RDY/BUSY\

A16

A14

A12

I/O 0

I/O 1

I/O 2

Vss

Vcc

A15

RES\

WE\

A13

A11

OE\

A10

CE\

I/O 7

I/O 6

I/O 5

I/O 4

I/O 3

FEATURES

Access speed: 120, 150, 200, and 250ns

Data Retention: 100 Years

Low power, active current: 50mA, standby current: 500uA

Single +5V (+10%) power supply

Data Polling and Ready/Busy Signals

Erase/Write Endurance (10,000 byte mode / 100,000 page

mode)

Software Data protection Algorithm

Data Protection Circuitry during power on/off

Hardware Data Protection

Automatic , Self-Timed Byte Write

Automatic Programming:

Automatic Page Write: 10ms (MAX)

OPTIONS

Timing

150ns access

200ns access

250ns access

Packages

Ceramic Flat Pack

CerDIP, 600 mil

Operating Temperature Ranges

-Military (-55

C to +125

-Industrial (-40

C to +85

-Full Military Processing

MARKINGS

-15

-20

-25

*NOTE:

Package lid is connected to ground (Vss).

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS28C010 is capable of in system

electrical Byte and Page reprogrammability.

The AS28C010 achieves high speed access, low power

consumption, and a high level of reliability by employing advanced

CMOS process and circuitry technology.

This device has a 256-Byte Page Programming function to make

its erase and write operations faster. The AS28C010 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

This EEPROM provides several levels of data protection. Hard-

AS28C010

Rev. 1.6 01/10

ware data protection is provided , in addition to noise protection on

the WE signal and write inhibit during power on and off. Software

data protection is implemented using JEDEC Optional Standard

algorithm.

The AS28C010 is designed for high reliability in the most

demanding applications. Data retention is speciﬁed for 100 years and

erase/write endurance is guaranteed to a minimum of 100,000 cycles

in the Page Mode and 10,000 cycles in the Byte Mode.

For more products and information

please visit our web site at

www.micross.com

Micross Components reserves the right to change products or speciﬁcations without notice.

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