EEPROM
AS28C010
128K x 8 EEPROM
EEPROM Memory
5 Volt, Byte Alterable
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-38267
MIL-STD-883
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F), 32-Pin CerDIP (CW)
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
Access speed: 120, 150, 200, and 250ns
Data Retention: 100 Years
Low power, active current: 50mA, standby current: 500uA
Single +5V (+10%) power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 byte mode / 100,000 page
mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection
Automatic , Self-Timed Byte Write
Automatic Programming:
Automatic Page Write: 10ms (MAX)
OPTIONS
Timing
150ns access
200ns access
250ns access
Packages
Ceramic Flat Pack
CerDIP, 600 mil
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
-Industrial (-40
o
C to +85
o
C)
-Full Military Processing
MARKINGS
-15
-20
-25
F
CW
XT
IT
Q
*NOTE:
Package lid is connected to ground (Vss).
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS28C010 is capable of in system
electrical Byte and Page reprogrammability.
The AS28C010 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
CMOS process and circuitry technology.
This device has a 256-Byte Page Programming function to make
its erase and write operations faster. The AS28C010 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection. Hard-
AS28C010
Rev. 1.6 01/10
ware data protection is provided , in addition to noise protection on
the WE signal and write inhibit during power on and off. Software
data protection is implemented using JEDEC Optional Standard
algorithm.
The AS28C010 is designed for high reliability in the most
demanding applications. Data retention is specified for 100 years and
erase/write endurance is guaranteed to a minimum of 100,000 cycles
in the Page Mode and 10,000 cycles in the Byte Mode.
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS28C010
FUNCTIONAL BLOCK DIAGRAM
AS28C010
Rev. 1.6 01/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS28C010
FUNCTIONAL DESCRIPTION
READ
Read operations are initiated by both OE\ and CE\
LOW. The read operation is terminated by either CE\ or OE\
returning HIGH. This two line control architecture eliminates
bus contention in a system environment. The data bus will be
in a high impedance state when either OE\ or CE\ is HIGH.
I/O
DP
TB
5
4
3
2
1
0
RESERVED
TOGGLE BIT
DATA\ POLLING
DATA\ POLLING
The AS28C010 features DATA\ Polling as a method to
indicate to the host system that the byte write or page write
cycle has completed. DATA\ Polling allows a simple bit
test operation to determine the status of the AS28C010,
eliminating additional interrupt inputs or external hardware.
During the internal programming cycle, any attempt to
read the last byte written will produce the complement of that
data on I/O
7
(i.e., write data = 0xxx xxxx, read data = 1xxx
xxxx). Once the programming cycle is complete, I/O
7
will reflect
true data. Note: If the AS28C010 is in the protected state and
an illegal write operation is attempted DATA\ Polling will not
operate.
WRITE
Write operations are initiated when both CE\ and WE\ are
LOW and OE\ is HIGH. The AS28C010 supports both a CE\
and WE\ controlled write cycle. That is, the address is latched
by the falling edge of either CE\ or WE\, whichever occurs
last. Similarly, the data is latched internally by the rising edge
of either CE\ or WE\, whichever occurs
fi
rst. A byte write
operation, once initiated, will automatically continue to
completion, typically within 5ms.
PAGE WRITE
The page write feature of the AS28C010 allows the entire
memory to be written in 5 seconds. Page write allows two to
two hundred
fi
fty-six bytes of data to be consecutively written
to the AS28C010 prior to the commencement of the internal
programming cycle. The host can fetch data from another
device within the system during a page write operation (change
the source address), but the page address (A
8
through A
16
)
for each subsequent valid write cycle to the part during this
operation must be the same as the initial page address.
The page write mode can be initiated during any write operation.
Following the initial byte write cycle, the host can write an
additional one to two hundred
fi
fty six bytes in the same manner
as the
fi
rst byte was written. Each successive byte load cycle,
started by the WE\ HIGH to LOW transition, must begin within
100μs of the falling edge of the preceding WE\. If a subsequent
WE\ HIGH to LOW transition is not detected within 100μs, the
internal automatic programming cycle will commence. There
is no page write window limitation. Effectively the page write
window is infinitely wide, so long as the host continues to access
the device within the byte load cycle time of 100μs.
TOGGLE BIT
The AS28C010 also provides another method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O
6
will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease and the device will be accessible for additional read or
write operations.
WRITE
The AS28C010 provides the user two write operation
status bits. These can be used to optimize a system write cycle
time. The status bits are mapped onto the I/O bus as shown in
Figure 1.
Figure 1: Status Bit Assignment
AS28C010
Rev. 1.6 01/10
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS28C010
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss................-0.5V to +7.0V
1
Voltage on any pin Relative to Vss.......................-0.6V to +7.0V
1
Storage Temperature ............................................-65°C to +150°C
Operating Temperature Range.............................-55
o
C to +125
o
C
Soldering Temperature Range...............................................260
o
C
Maximum Junction Temperature**....................................+150°C
Power Dissipation...................................................................1.0W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operation section of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
A
< 125
o
C; Vcc = 5V +10%)
PARAMETER
Input High (Logic 1) Voltage
1
1
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
CONDITION
SYMBOL
V
IH
V
IL
I
LI
I
LO
V
OH
V
OL
MIN
2.0
-1.0
MAX
V
CC
+ 1.0V
0.8
10
10
0.4
UNITS
V
V
V
IN
= V
SS
to V
CC
V
OUT
=V
SS
to Vcc, CE\=V
IH
I
OH
= -400 A
I
OL
= 2.1 mA
2.4
V
V
Notes: 1) V
IL
min. and V
IH
max. are for reference only and are not tested.
PARAMETER
Power Supply Current:
Operating
CONDITIONS
I
OUT
=OmA, Vcc = 5.5V
Cycle=MIN
SYM
I
CC3
-12
100
MAX
-15
-20
100
80
-25
80
UNITS NOTES
mA
CE\=Vcc, Vcc = 5.5V
Power Supply Current:
Standby
CE\=V
IH
, Vcc = 5.5V
I
CC1
500
500
500
500
A
I
CC2
3
3
3
3
mA
AS28C010
Rev. 1.6 01/10
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS28C010
CAPACITANCE
T
A
=+25
o
C, f= 1MHZ, V
CC
=5V
PARAMETER
Input Capacitance
Input / Output Capactiance
SYMBOL
C
IN(2)
C
I/O(2)
MAX
10
10
UNITS
pF
pF
Test Conditions
V
IN
=0V
V
I/O
=0V
POWER-UP TIMING
Symbol
t
PUR (2)
t
PUW (2)
Parameter
Power-up to Read Operation
Power-up to Write Operation
Max.
100
5
Units
s
ms
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Endurance
Data Retention
Min.
10,000
100,000
100
Max.
Units
Cycles Per Byte
Cycles Per Page
Years
MODE SELECTION
MODE
READ
STANDBY
WRITE
CE\
V
IL
V
IH
V
IL
V
IL
X
X
V
IL
OE\
V
IL
X
V
IH
V
IH
X
V
IL
V
IL
WE\
V
IH
X
V
IL
V
IH
V
IH
X
V
IH
I/O
D
OUT
High-Z
D
IN
High-Z
---
---
Data Out
(I/O7)
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
0V to 3V
10ns
1.5V
DESELECT
WRITE
INHIBIT
DATA
POLLING
EQUIVALENT A.C. LOAD CURRENT
SYMBOL TABLE
Notes: (2) This parameter is periodically sampled and not 100% tested.
AS28C010
Rev. 1.6 01/10
Micross Components reserves the right to change products or specifications without notice.
5
京公网安备 11010802033920号
EEWORLD
