EEPROM, 128KX8, 120ns, Parallel, CMOS, CDFP32, BOTTOM BRAZED, CERAMIC, MO-115, FP-32
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | DFP |
| package instruction | DFP, |
| Contacts | 32 |
| Reach Compliance Code | unknow |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 120 ns |
| Other features | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS |
| Data retention time - minimum | 10 |
| JESD-30 code | R-CDFP-F32 |
| JESD-609 code | e0 |
| length | 20.85 mm |
| memory density | 1048576 bi |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DFP |
| Package shape | RECTANGULAR |
| Package form | FLATPACK |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 240 |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 3.05 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | FLAT |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| width | 12.2 mm |
| Maximum write cycle time (tWC) | 10 ms |
| Base Number Matches | 1 |
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