DSS6-0045AS
Schottky Diode
V
RRM
I
FAV
V
F
=
=
=
45 V
6A
0.5 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSS6-0045AS
Marking on Product: 6Y045AS
Backside: cathode
1
3
4
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
TO-252 (DPak)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190221d
© 2019 IXYS all rights reserved
DSS6-0045AS
Schottky
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
45 V
45 V
6A
12 A
6A
12 A
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.35
13.9
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
=
5 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
497
50
120
V
mΩ
K/W
W
A
pF
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
min.
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
typ.
max. Unit
45
V
45
250
2.5
0.63
0.71
0.50
0.59
6
V
µA
mA
V
V
V
V
A
V
R
=
V
R
=
I
F
=
I
F
=
I
F
=
I
F
=
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 165 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
3 K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190221d
© 2019 IXYS all rights reserved
DSS6-0045AS
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
1)
TO-252 (DPak)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
1)
min.
-55
-55
-55
typ.
max.
20
175
150
150
Unit
A
°C
°C
°C
g
N
0.3
mounting force with clip
20
60
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Logo
Part number
IXYS
abcdefg
Z YY
WW
Assembly Line
Date Code
Ordering
Standard
Alternative
Ordering Number
DSS6-0045AS-TRL
DSS6-0045AS-TUB
Marking on Product
6Y045AS
6Y045AS
Delivery Mode
Tape & Reel
Tube
Quantity
2500
70
Code No.
497878
525014
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Schottky
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.35
10.7
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190221d
© 2019 IXYS all rights reserved
DSS6-0045AS
Outlines TO-252 (DPak)
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190221d
© 2019 IXYS all rights reserved
DSS6-0045AS
Schottky
20
100
10
10
1000
T
VJ
=175°C
I
F
[A]
T
VJ
=
175°C
150°C
125°C
25°C
I
R
[mA]
1
150°C
125°C
C
T
[pF]
T
VJ
= 25°C
0.1
100°C
0.01
75°C
50°C
0.001
0.0001
25°C
1
0.0
100
0
10
20
30
40
50
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
V
F
[V]
Fig. 1 Max. forward voltage
drop characteristics
V
R
[ V]
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
14
12
V
R
[V]
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
25
20
d = 0.5
DC
10
8
d=
DC
0.5
0.33
0.25
0.17
0.08
15
I
F(AV)
10
P
(AV)
6
[A]
5
[W]
4
2
0
0
50
100
150
200
0
0
5
10
15
20
T
C
[°C]
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
10
I
F(AV)
[A]
Fig. 5 Forward power loss
characteristics
1
Z
thJC
[K/W]
0.1
D = 0.5
0.33
0.25
0.17
0.08
Single Pulse
0.01
0.0001
Note: All curves are per diode
0.001
0.01
t [s]
0.1
1
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20190221d
© 2019 IXYS all rights reserved
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