P140CH05DM0 datasheet, PDF - EEWORLD Datasheet

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P140CH05DM0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size288KB，4 Pages; ManufacturerIXYS

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P140CH05DM0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB

P140CH05DM0 Parametric

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Critical rise rate of minimum off-state voltage	50 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	3200 A
Maximum on-state current	354000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-30 °C
Off-state repetitive peak voltage	500 V
surface mount	NO
Trigger device type	SCR

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Description	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),175A I(T),TO-209AC	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,500V V(DRM),354A I(T),TO-200AB	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),175A I(T),TO-208VAR1/2	Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),175A I(T),TO-208VAR1/2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Critical rise rate of minimum off-state voltage	50 V/us	200 V/us	200 V/us	20 V/us	200 V/us	20 V/us	20 V/us	200 V/us	100 V/us
Maximum DC gate trigger current	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA	200 mA
Maximum DC gate trigger voltage	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Maximum holding current	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA	600 mA
Maximum leakage current	30 mA	20 mA	20 mA	20 mA	20 mA	30 mA	20 mA	20 mA	20 mA
On-state non-repetitive peak current	3200 A	2200 A	2200 A	2200 A	2200 A	3200 A	2200 A	2200 A	2200 A
Maximum on-state current	354000 A	175000 A	175000 A	175000 A	175000 A	354000 A	175000 A	175000 A	175000 A
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-30 °C	-40 °C	-40 °C	-40 °C	-40 °C	-30 °C	-40 °C	-40 °C	-40 °C
Off-state repetitive peak voltage	500 V	600 V	600 V	200 V	600 V	500 V	600 V	400 V	600 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
Maker	IXYS	-	-	-	-	IXYS	IXYS	IXYS	IXYS
Nominal circuit commutation break time	-	25 µs	20 µs	15 µs	15 µs	-	15 µs	25 µs	25 µs

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