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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2720GR
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
The
µ
PA2720GR is N-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3 : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
•
Low on-state resistance
R
DS(on)1
= 6.6 mΩ MAX. (V
GS
= 10 V, I
D
= 7 A)
R
DS(on)2
= 10 mΩ MAX. (V
GS
= 4.5 V, I
D
= 7 A)
•
Low C
iss
: C
iss
= 2800 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in gate protection diode
•
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Note
0.12 M
µ
PA2720GR-E1
µ
PA2720GR-E1-A
µ
PA2720GR-E2
µ
PA2720GR-E2-A
Power SOP8
Power SOP8
Power SOP8
EQUIVALENT CIRCUIT
Drain
Note
Note
Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
GSS
±20
Gate to Source Voltage (V
DS
= 0 V)
±14
Drain Current (DC)
I
D(DC)
Note1
Drain Current (pulse)
±140
I
D(pulse)
Note2
Total Power Dissipation
1.1
P
T1
Note2
Total Power Dissipation (PW = 10 sec)
P
T2
2.5
150
Channel Temperature
T
ch
–55 to +150
Storage Temperature
T
stg
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17443EJ1V0DS00 (1st edition)
Date Published July 2005 NS CP(K)
Printed in Japan
2005
Microcontroller MCU
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