BZX55B...
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Low noise
Very high stability
Available with tighter tolerances
V
Z
–tolerance
±
2%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
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