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K4S560832D-NC1L

Description
Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54
Categorystorage    storage   
File Size80KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4S560832D-NC1L Overview

Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54, 7.62 X 14 MM, STSOP2-54

K4S560832D-NC1L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionSOP, TSSOP54,.36,20
Contacts54
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals54
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeTSSOP54,.36,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.19 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
K4S560832D
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
May. 2002
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 May. 2002
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