K4H560838J-HLCC0 datasheet, PDF

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K4H560838J-HLCC0: DescriptionDDR DRAM, 32MX8, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT AND HALOGEN FREE, FBGA-60; Categorystorage storage; File Size384KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H560838J-HLCC0 Overview

DDR DRAM, 32MX8, 0.65ns, CMOS, PBGA60, ROHS COMPLIANT AND HALOGEN FREE, FBGA-60

K4H560838J-HLCC0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X12,40/32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
length	14 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.004 A
Maximum slew rate	0.29 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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K4H560438J

K4H560838J

K4H561638J

DDR SDRAM

256Mb J-die DDR SDRAM Specification

60 FBGA with Pb-Free and Halogen-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

1 of 24

Rev. 1.0 September 2007

K4H560438J

K4H560838J

K4H561638J

DDR SDRAM

Table of Contents

1.0 Key Features ...............................................................................................................................4

2.0 Ordering Information ..................................................................................................................4

3.0 Operating Frequencies ...............................................................................................................4

4.0 Ball Description (Bottom View) .................................................................................................5

5.0 Package Physical Dimension ....................................................................................................6

6.0 Block Diagram (16Mb x 4 / 8Mb x 8 / 4Mb x 16 I/O x4 Banks) .................................................7

7.0 Input/Output Function Description ...........................................................................................8

8.0 Command Truth Table ................................................................................................................9

9.0 General Description ..................................................................................................................10

10.0 Absolute Maximum Rating .....................................................................................................10

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

21.0

DC Operating Conditions .......................................................................................................10

DDR SDRAM IDD Spec Items & Test Conditions .................................................................11

Input/Output Capacitance ......................................................................................................11

Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12

DDR SDRAM IDD spec table ..................................................................................................13

AC Operating Conditions .......................................................................................................14

AC Overshoot/Undershoot specification for Address and Control Pins ...........................14

Overshoot/Undershoot specification for Data, Strobe and Mask Pins ..............................15

AC Timming Parameters & Specifications ...........................................................................16

System Characteristics for DDR SDRAM .............................................................................17

Component Notes ...................................................................................................................18

22.0 System Notes ..........................................................................................................................20

23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21

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Rev. 1.0 September 2007

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