K3P6C1000F-GC
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
•
Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
•
Fast access time
Random Access Time : 100ns(Max.)@C
L
=50pF,
120ns(Max.)@C
L
=100pF
Page Access Time
: 30ns(Max.)@C
L
=50pF
: 40ns(Max.)@C
L
=100pF
8 Words / 16 Bytes page access
•
Supply voltage : single +5V
•
Current consumption
Operating : 150mA(Max.)
Standby : 50µA(Max.)
•
Fully static operation
•
All inputs and outputs TTL compatible
•
Three state outputs
•
Package
-. K3P6C1000F-GC : 44-SOP-600
CMOS MASK ROM
GENERAL DESCRIPTION
The K3P6C1000F-GC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 4,194,304x8 bit(byte mode) or as
2,097,152x16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words (or 16 bytes) of data to read fast in the same
page, CE and A
3
~ A
20
should not be changed.
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3P6C1000F-GC is packaged in a 44-SOP.
FUNCTIONAL BLOCK DIAGRAM
A
20
.
.
.
.
.
.
.
.
A
3
A
0~
A
2
A
-1
X
BUFFERS
AND
DECODER
PIN CONFIGURATION
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
N.C
A
18
A
17
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
44 A
20
43 A
19
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
35 A
15
Y
BUFFERS
AND
DECODER
SENSE AMP.
DATA OUT
BUFFERS
. . .
A
3
A
2
A
1
10
A
0
11
CE 12
V
SS
13
OE 14
Q
0
15
16
17
18
19
20
Q
8
Q
1
Q
9
Q
2
Q
10
SOP
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
CE
OE
BHE
Pin Name
A
0
- A
2
A
3
- A
20
Q
0
- Q
14
Q
15
/A
-1
BHE
CE
OE
V
CC
V
SS
N.C
CONTROL
LOGIC
Q
0
/Q
8
Q
7
/Q
15
Pin Function
Page Address Inputs
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground
No Connection
Q
3
21
Q
11
22
K3P6C1000F-GC
K3P6C1000F-GC
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on Any Pin Relative to V
SS
Temperature Under Bias
Storage Temperature
Symbol
V
IN
T
BIAS
T
Stg
Rating
CMOS MASK ROM
Unit
V
°C
°C
-0.3 to +7.0
-10 to +85
-55 to +150
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70°C)
Item
Supply Voltage
Supply Voltage
Symbol
V
CC
V
SS
Min
4.5
0
Typ
5.0
0
Max
5.5
0
Unit
V
V
DC CHARACTERISTICS
Parameter
Operating Current
Standby Current(TTL)
Standby Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage, All Inputs
Input Low Voltage, All Inputs
Output High Voltage Level
Output Low Voltage Level
Symbol
I
CC
I
SB1
I
SB2
I
LI
I
LO
V
IH
V
IL
V
OH
V
OL
I
OH
=-400µA
I
OL
=2.1mA
Test Conditions
Cycle=5MHz, all outputs open, CE=OE=V
IL
,
V
IN
=0.6V to 2.4V (AC Test Condition)
CE=V
IH
, all outputs open
CE=V
CC
, all outputs open
V
IN
=0 to V
CC
V
OUT
=0 to V
CC
-
-
2.2
-0.3
2.4
-
Min
-
Max
150
1
50
10
10
V
CC
+0.3
0.8
-
0.4
Unit
mA
mA
µA
µA
µA
V
V
V
V
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
MODE SELECTION
CE
H
L
L
OE
X
H
L
L
Input
Operating
BHE
X
X
H
Q
15
/A
-1
X
X
Output
Mode
Standby
Operating
Operating
Data
High-Z
High-Z
Q
0
~Q
15
: Dout
Q
0
~Q
7
: Dout
Q
8
~Q
14
: Hi-Z
Power
Standby
Active
Active
Active
CAPACITANCE
(T
A
=25°C, f=1.0MHz)
Item
Output Capacitance
Input Capacitance
Symbol
C
OUT
C
IN
Test Conditions
V
OUT
=0V
V
IN
=0V
Min
-
-
Max
12
12
Unit
pF
pF
NOTE
: Capacitance is periodically sampled and not 100% tested.
K3P6C1000F-GC
TEST CONDITIONS
Item
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
Value
CMOS MASK ROM
AC CHARACTERISTICS
(T
A
=0°C to +70°C, V
CC
=5.0V±10%, unless otherwise noted.)
0.6V to 2.4V
10ns
0.8V and 2.0V
1 TTL Gate and C
L
=50pF or 100pF
READ CYCLE
Item
Read Cycle Time
Chip Enable Access Time
Address Access Time
Page Address Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
Output Hold from Address Change
NOTE
: Page Address is determined as below.
Word mode(BHE=V
IH
) ; A
0
, A
1
, A
2
Byte mode(BHE=V
IL
) ; A
-1
, A
0
, A
1
, A
2
Symbol
t
RC
t
ACE
t
AA
t
PA
t
OE
t
DF
t
OH
K3P5C1000F-GC10
(C
L
=50pF)
Min
100
100
100
30
30
20
0
Max
K3P5C1000F-GC12
(C
L
=100pF)
Min
120
120
120
40
40
20
0
Max
K3P5C1000F-GC15
(C
L
=100pF)
Min
150
150
150
50
50
30
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
K3P6C1000F-GC
TIMING DIAGRAM
READ
CMOS MASK ROM
ADD
A
0
~A
20
A
-1(*1)
t
ACE
ADD1
t
RC
ADD2
t
DF(*3)
CE
t
OE
t
AA
OE
t
OH
D
OUT
D
0
~D
7
D
8
~D
15(*2)
VALID DATA
VALID DATA
PAGE READ
≈
CE
t
DF(*3)
ADD
A
3
~A
20
ADD
A
0
,A
1,A2
A
-1(*1)
t
AA
1 st
t
PA
VALID DATA
2 nd
3 rd
≈
VALID DATA
VALID DATA
VALID DATA
NOTES :
*1. Byte Mode only. A
-1
is Least Significant Bit Address.(BHE = V
IL
)
*2. Word Mode only.(BHE = V
IH
)
*3. t
DF
is defined as the time at which the outputs achieve the open circuit condition and is not referenced to V
OH
or V
OL
level.
≈
≈
≈
D
OUT
D
0
~D
7
D
8
~D
15(*2)
≈
≈
≈
OE
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