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K7R160882B-FC200

Description
QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Categorystorage    storage   
File Size211KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K7R160882B-FC200 Overview

QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

K7R160882B-FC200 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length15 mm
memory density16777216 bit
Memory IC TypeQDR SRAM
memory width8
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
K7R163682B
K7R161882B
K7R160982B
K7R160882B
Document Title
Preliminary
512Kx36 & 1Mx18 & 2Mx9 & 2Mx8 QDR
TM
II b2 SRAM
512Kx36-bit, 1Mx18-bit, 2Mx9-bit, 2Mx8-bit QDR
TM
II b2 SRAM
Revision History
Rev. No.
0.0
0.1
History
1. Initial document.
1. Change the Boundary scan exit order.
2. Correct the Overshoot and Undershoot timing diagram.
1. Change the JTAG Block diagram
1. Change the DC characteristics table.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Add the power up/down sequencing comment.
2. Update the DC current parameter (Icc and Isb).
1. Update the Stand-by current(Isb)
Draft Date
Oct. 17, 2002
Dec. 16, 2002
Remark
Advance
Preliminary
0.2
0.3
0.4
Dec. 26, 2002
Jan. 27, 2003
Mar. 20, 2003
Preliminary
Preliminary
Preliminary
0.5
April. 4, 2003
Preliminary
0.6
June. 20, 2003
Preliminary
0.7
June. 23, 2003
Preiliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
June. 2003
Rev 0.6

K7R160882B-FC200 Related Products

K7R160882B-FC200 K7R160882B-FC250 K7R160882B-FC160
Description QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 QDR SRAM, 2MX8, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Maker SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA
package instruction LBGA, LBGA, LBGA,
Contacts 165 165 165
Reach Compliance Code unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 0.45 ns 0.45 ns 0.5 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
length 15 mm 15 mm 15 mm
memory density 16777216 bit 16777216 bit 16777216 bit
Memory IC Type QDR SRAM QDR SRAM QDR SRAM
memory width 8 8 8
Number of functions 1 1 1
Number of terminals 165 165 165
word count 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 2MX8 2MX8 2MX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.4 mm 1.4 mm 1.4 mm
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM
width 13 mm 13 mm 13 mm
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