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HVD365-E

Description
27.8pF, 15V, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2
CategoryDiscrete semiconductor    diode   
File Size52KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
Download Datasheet Parametric View All

HVD365-E Overview

27.8pF, 15V, SILICON, VARIABLE CAPACITANCE DIODE, SFP-2

HVD365-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSFP-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage15 V
ConfigurationSINGLE
Diode Capacitance Tolerance2.69%
Minimum diode capacitance ratio3
Nominal diode capacitance27.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature20
HVD365
Variable Capacitance Diode for VCO
REJ03G0501-0300
Rev.3.00
Jan 24, 2006
Features
High capacitance ratio and good C-V linearity.
Super small Flat Lead Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
HVD365
Laser Mark
H
Package Name
SFP
Package Code
PUSF0002ZB-A
Pin Arrangement
Cathode mark
Mark
1
H
2
1. Cathode
2. Anode
Rev.3.00 Jan 24, 2006 page 1 of 4
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