K4S641632C-TL10RM datasheet, PDF

K4S641632C-TL10RM: DescriptionSynchronous DRAM, 4MX16, 7ns, CMOS, PDSO54; Categorystorage storage; File Size553KB，11 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S641632C-TL10RM Overview

Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	TSOP, TSOP54,.46,32
Reach Compliance Code	compliant
Maximum access time	7 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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