IRFE220 datasheet, PDF - EEWORLD Datasheet

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IRFE220: DescriptionPower Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18; CategoryDiscrete semiconductor The transistor; File Size192KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRFE220 Overview

Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

IRFE220 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, LCC-18
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	0.242 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	2.8 A
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
JESD-609 code	e0
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	14 W
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PD - 93984A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTORS

SURFACE MOUNT (LCC-18)

Product Summary

Part Number

IRFE220

VDSS

100V

DS(on)

0.80Ω

2.8A

IRFE220

JANTX2N6790U

REF:MIL-PRF-19500/555

200V, N-CHANNEL

LCC-18

The leadless chip carrier (LCC) package represents the

logical next step in the continual evolution of surface

mount technology. Desinged to be a close replacement

for the TO-39 package, the LCC will give designers the

extra flexibility they need to increase circuit board density.

International Rectifier has engineered the LCC package

to meet the specific needs of the power market by

increasing the size of the bottom source pad, thereby

enhancing the thermal and electrical performance. The

lid of the package is grounded to the source to reduce

RF interference.

Features:

Surface Mount

Small Footprint

Alternative to TO-39 Package

Hermetically Sealed

Dynamic dv/dt Rating

Avalanche Energy Rating

Simple Drive Requirements

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

300 (for 5s)

0.42(typical)

2.8

1.8

0.11

±20

0.242

2.2

1.4

5.0

-55 to 150

Units

W/°C

V/ns

°C

www.irf.com

08/07/07

IRFE220 Related Products

	IRFE220
Description	Power Field-Effect Transistor, 2.8A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, LCC-18
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	0.242 mJ
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	2.8 A
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
JESD-609 code	e0
Number of components	1
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	14 W
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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