IRFE220-JQR-B datasheet, PDF - EEWORLD Datasheet

IRFE220-JQR-B: DescriptionPower Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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IRFE220-JQR-B Overview

Power Field-Effect Transistor, 2.8A I(D), 200V, 0.92ohm, Silicon, Metal-oxide Semiconductor FET, LCC4-15

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CHIP CARRIER, R-CQCC-N15
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	2.8 A
Maximum drain-source on-resistance	0.92 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CQCC-N15
Number of terminals	15
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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