MRF5836HXV datasheet, PDF - EEWORLD Datasheet

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MRF5836HXV: DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, L Band, Silicon, NPN, TO-46; CategoryDiscrete semiconductor The transistor; File Size558KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MRF5836HXV Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, L Band, Silicon, NPN, TO-46

MRF5836HXV Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Reach Compliance Code	unknown
Maximum collector current (IC)	0.2 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
highest frequency band	L BAND
JEDEC-95 code	TO-46
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	0.75 W
Maximum power dissipation(Abs)	0.75 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	2000 MHz

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MRF5836HXV Related Products

	MRF5836HXV	2N5837	2N5836	MRF5836HX
Description	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, L Band, Silicon, NPN, TO-46	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-46	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-46	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-46
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.2 A	0.3 A	0.2 A	0.2 A
Collector-based maximum capacity	3.5 pF	5 pF	3.5 pF	3.5 pF
Collector-emitter maximum voltage	10 V	5 V	10 V	10 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25
highest frequency band	L BAND	L BAND	L BAND	L BAND
JEDEC-95 code	TO-46	TO-46	TO-46	TO-46
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power consumption environment	0.75 W	0.75 W	0.75 W	0.75 W
Maximum power dissipation(Abs)	0.75 W	2 W	2 W	0.75 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	2000 MHz	1700 MHz	2000 MHz	2000 MHz
package instruction	-	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3

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