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DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103
N-channel enhancement mode
MOS transistor
Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
1998 Feb 11
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
FEATURES
•
Very low threshold
•
High-speed switching
•
No secondary breakdown
•
Direct interface to C-MOS, TTL etc.
APPLICATIONS
•
Power management
•
DC to DC converters
•
Battery powered applications
•
‘Glue-logic’; interface between logic blocks and/or
periphery
•
General purpose switch.
1
Top view
2
MAM273
BSH103
PINNING - SOT23
PIN
1
2
3
SYMBOL
g
s
d
gate
source
drain
DESCRIPTION
handbook, halfpage
3
d
g
s
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
QUICK REFERENCE DATA
SYMBOL
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
PARAMETERS
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
V
DS
= V
GS
; I
D
= 1 mA
T
s
= 80
°C
V
GS
= 2.5 V; I
D
= 0.5 A
T
s
= 80
°C
CAUTION
V
GD
= 0; I
S
= 0.5 A
CONDITIONS
−
−
−
0.4
−
−
−
MIN.
Fig.1 Simplified outline and symbol.
MAX.
30
1
±8
−
0.85
0.5
0.5
V
V
V
V
A
Ω
W
UNIT
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
2
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
I
DM
P
tot
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
T
s
= 80
°C;
note 1
note 2
T
s
= 80
°C
T
amb
= 25
°C;
note 3
T
amb
= 25
°C;
note 4
T
stg
T
j
I
S
I
SM
Notes
1. T
s
is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
4. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
storage temperature
operating junction temperature
T
s
= 80
°C
note 2
CONDITIONS
−
−
−
−
−
−
−
−55
−55
−
−
MIN.
BSH103
MAX.
30
±8
0.85
3.4
0.5
0.75
0.54
+150
+150
V
V
A
A
UNIT
W
W
W
°C
°C
Source-drain diode
source current (DC)
peak pulsed source current
0.5
2
A
A
MGM190
MBK502
handbook, halfpage
0.6
handbook, halfpage
10
Ptot
(W)
0.4
IDS
(A)
(2)
1
(1)
10
−
1
P
0.2
10
−
2
tp
0
0
40
80
120
Ts (°C)
160
10
−
3
10
−
1
T
1
10
VDS (V)
10
2
t
δ
= T
tp
DC
δ
= 0.01; T
s
= 80
°C.
(1) R
DSon
limitation.
(2) Pulsed.
Fig.2 Power derating curve.
Fig.3 SOAR.
1998 Feb 11
3
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
140
BSH103
UNIT
K/W
handbook, full pagewidth
10
3
MBK503
Rth j-s
(K/W)
δ
=1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
10
−6
0
10
−5
10
−4
10
−3
10
−2
10
−1
tp (s)
1
tp
T
t
P
10
2
δ
=
tp
T
Fig.4
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 11
4
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