Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1100SM
thru
SHF1103SM
1 AMP
50–300 Volts
35 nsec
HYPER FAST RECTIFIER
Features:
•
•
•
•
•
•
•
•
Hyper Fast Recovery: 35 nsec Max.
PIV to 300 Volts
Hermetically Sealed Surface Mount Package
Void Free Construction
For High Efficiency Applications
Single Chip Construction
Replaces for UES1104 Types
TX, TXV, and S-Level Screening Available
2/
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SHF11 __ SM __
⏐
⏐
⏐
⏐
⏐
L
⏐
⏐
⏐
⏐
L
Screening
= None
TX = TX Level
TXV = TXV Level
-S = S Level
2/
L
Package
SM = Surface Mount Round Tab
Voltage
00 = 50 V
01 = 100 V
02 = 200 V
03 = 300 V
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
SHF1100SM
SHF1101SM
SHF1102SM
SHF1103SM
Symbol
V
RRM
V
RWM
V
R
Io
Value
50
100
200
300
1
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25ºC)
Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to End Tab
Amps
I
FSM
Top & Tstg
R
θJE
20
-65 to +175
28
SM
Amps
ºC
ºC/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0115C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1100SM
thru
SHF1103SM
Symbol
V
F
V
F
I
R
I
R
C
J
t
rr
Electrical Characteristics
Instantaneous Forward Voltage Drop
(I
F
= 1 Adc, T
A
= 25ºC, 300 µs pulse)
Instantaneous Forward Voltage Drop
(I
F
= 5Adc, T
A
= -55ºC, 300 µs pulse)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC, 300 µs pulse minimum)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC, 300 µs pulse minimum)
Junction Capacitance
(V
R
= 10 Vdc, T
A
= 25ºC, f = 1MHz)
Reverse Recovery Time
(I
F
= 500 mA, I
R
= 1A, I
RR
= 0.25A, T
A
= 25ºC)
Case Outline:
Surface Mount Round Tab
Max
1.35
1.5
10
1
20
35
Units
Vdc
Vdc
μA
mA
pF
nsec
DIMENSIONS
DIM
A
B
C
MIN
.095”
.190”
.005”
MAX
.105”
.210”
.025”
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0115C
DOC
Test/Measurement
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