BCW81T/R datasheet, PDF - EEWORLD Datasheet

BCW81T/R: DescriptionTRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size53KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BCW81T/R Overview

TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V

	BCW81T/R	BCW81
Description	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
Maker	NXP	NXP
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	420	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V

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