BCX55-16TR datasheet, PDF - EEWORLD Datasheet

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BCX55-16TR: DescriptionPower Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerCentral Semiconductor

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BCX55-16TR Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX55-16TR Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

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BCX54

BCX55

BCX56

SURFACE MOUNT

NPN SILICON TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCX54,

BCX55, and BCX56 types are NPN Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for high current general

purpose amplifier applications.

MARKING CODE:

(SEE TABLE ON FOLLOWING PAGE)

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BCX54

BCX55

BCX56

100

5.0

1.0

1.5

100

200

1.3

-65 to +150

UNITS

°C

°C/W

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=30V

ICBO

VCB=30V, TA=125°C

IEBO

VEB=5.0V

BVCBO

IC=100μA (BCX54)

BVCBO

IC=100μA (BCX55)

BVCBO

IC=100μA (BCX56)

100

BVCEO

IC=10mA (BCX54)

BVCEO

IC=10mA (BCX55)

BVCEO

IC=10mA (BCX56)

VCE(SAT)

IC=500mA, IB=50mA

VBE(ON)

VCE=2.0V, IC=500mA

VCE=2.0V, IC=5.0mA

hFE

VCE=2.0V, IC=150mA

hFE

VCE=2.0V, IC=150mA

(BCX54-10, BCX55-10, BCX56-10)

hFE

VCE=2.0V, IC=150mA

(BCX54-16, BCX55-16, BCX56-16)

100

hFE

VCE=2.0V, IC=500mA

VCE=5.0V, IC=10mA, f=100MHz

TYP

MAX

100

0.5

1.0

250

160

250

130

UNITS

μA

MHz

R4 (30-July 2008)

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