BCX68...
NPN Silicon AF Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Complementary type: BCX69 (PNP)
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
3
1
2
2
Type
BCX68-10
BCX68-16
BCX68-25
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
CB
CC
CD
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
20
25
5
1
2
100
200
3
150
-65 ... 150
Value
≤
12
Unit
V
A
mA
W
°C
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
114 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-10-06
BCX68...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
20
I
C
= 30 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
25
5
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 1 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
-
-
-
100
160
250
-
-
0.1
100
-
-
160
250
375
-
0.5
V
DC current gain
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 1 V, BCX68-10
I
C
= 500 mA,
V
CE
= 1 V, BCX68-16
I
C
= 500 mA,
V
CE
= 1 V, BCX68-25
I
C
= 1 A,
V
CE
= 1 V
50
85
100
160
60
V
CEsat
V
BE(ON)
Collector-emitter saturation voltage
1)
I
C
= 1 A,
I
B
= 100 mA
-
Base-emitter voltage
1)
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 1 A,
V
CE
= 1 V
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
I
C
= 100 mA,
V
CE
= 5 V,
f
= 20 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
2
2011-10-06
BCX68...
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 1 V
10
3
5
BCX 68
EHP00464
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
4 BCX 68
EHP00465
10
mA
h
FE
100 ˚C
10
2
5
25 ˚C
-50 ˚C
Ι
C
10
5
100 ˚C
25 ˚C
-50 ˚C
3
10
5
2
10
1
5
10
5
1
10
0
10
0
10
0
5 10
1
5 10
2
5 10
3
mA 10
4
0
0.2
0.4
0.6
V
0.8
Ι
C
V
CE sat
Base-emitter saturation voltage
I
C
=
ƒ
(
V
BEsat
),
h
FE
= 10
10
4
mA
BCX 68
EHP00467
Collector current
I
C
=
ƒ
(
V
BE
)
V
CE
= 1V
10
4
mA
BCX 68
EHP00461
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
Ι
C
10
3
5
100 ˚C
25 ˚C
-50 ˚C
10
2
5
10
2
5
10
5
1
10
5
1
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE sat
10
0
0
0.2
0.4
0.6
0.8
1.0 V 1.2
V
BE
3
2011-10-06
BCX68...
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CB
= 25 V
10
5
nA
BCX 68
EHP00466
Transition frequency
f
T
=
ƒ
(
I
C
)
V
CE
= 5 V
10
3
MHz
BCX 68
EHP00463
Ι
CB0
10
5
4
max
f
T
5
10
3
5
10
2
5
10
5
10
0
1
10
2
typ
5
0
50
100
˚C
T
A
150
10
1
10
0
5 10
1
5
10
2
mA
10
3
Ι
C
Total power dissipation
P
tot
=
ƒ
(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
3.5
W
10
2
R
thJS
2.5
P
tot
10
1
2
1.5
10
0
1
0.5
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0
0
15
30
45
60
75
90 105 120
°C
150
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
s
t
p
4
2011-10-06
BCX68...
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
10
3
P
totmax/
P
totDC
-
10
2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
5
2011-10-06
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