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BD140.10

Description
1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA
CategoryDiscrete semiconductor    The transistor   
File Size73KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BD140.10 Overview

1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA

BD140.10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment12.5 W
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)75 MHz

BD140.10 Related Products

BD140.10 BD170 BD232 MJE241 BD139.10
Description 1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA 1.5A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA 0.5A, 300V, NPN, Si, POWER TRANSISTOR, TO-225AA 4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA 1.5A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 1.5 A 1.5 A 0.5 A 4 A 1.5 A
Collector-emitter maximum voltage 80 V 80 V 300 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 63 15 20 40 63
JEDEC-95 code TO-225AA TO-225AA TO-225AA TO-225AA TO-225AA
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP NPN NPN NPN
Maximum power consumption environment 12.5 W 20 W 20 W 15 W 12.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 75 MHz 6 MHz - 40 MHz 250 MHz
ECCN code - EAR99 EAR99 EAR99 -
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